RF Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates Under Bending Conditions

Qin, Guoxuan; Seo, Jung‐Hun; Zhang, Yang; Zhou, Han; Zhou, Weidong; Wang, Yuxin; Ma, Jan; Ma, Zhenqiang

doi:10.1109/led.2012.2231853

Cited by 37 publications

(21 citation statements)

References 17 publications

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“…In the pursuit of new physical properties, Group IV NMs have been strained in a controlled manner, among others, to modify the band structure or band offsets [11,12], to change the strain symmetry [13], or to create improved two-dimensional electron gases [14,15]. In the pursuit of nanoarchitectures or new devices, Group IV NMs have been rolled into tubes [10,[16][17][18] or supported channels [19]; or bonded to flexible supports [7,[20][21][22][23][24] or curved surfaces [25] for electronic-and optoelectronic-device applications.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Clausen¹,

Paskiewicz²,

Sadeghirad³

et al. 2014

Extreme Mechanics Letters

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Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in the substrate, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon nanomembranes (SiNMs), extremely thin sheets of single-crystalline Si, as a substrate for the growth of amorphous SiN x to begin to address this question. Nanomembranes are released from a silicon-oninsulator wafer with selective etching, transferred over a hole etched into a Si wafer, and bonded to the edges of the hole. The nanomembrane window provides the substrate for SiN x deposition and a platform, using Raman spectroscopy, for measurements of the evolving strain in the nanomembrane. From the strain in the nanomembrane, the film stress can be inferred from the required balance of forces in the film/substrate system. We observe that the strain in the tethered 2 NM increases as the NM is made thinner while the intrinsic steady-state stress in the deposited film is reduced.

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Section: Introductionmentioning

confidence: 99%

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Clausen¹,

Paskiewicz²,

Sadeghirad³

et al. 2014

Extreme Mechanics Letters

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“…Previously, microwave thin-film transistors (TFTs) have been demonstrated on polyethylene terephthalate (PET) substrates. 16,17,[24][25][26][27][28] However, petroleum based PET substrates are not biodegradable. In addition, fabrication of TFTs on chemically stable PET substrates does not encounter solvent compatibility issues during wet processing.…”

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confidence: 99%

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Seo

Chang

Lee

et al. 2015

Applied Physics Letters

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In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly biodegradable, flexible, and high performance devices. Double-gate flexible Si NM TFTs built on a CNF substrate have shown an electron mobility of 160 cm2/V·s and fT and fmax of 4.9 GHz and 10.6 GHz, respectively. This demonstration proves the microwave frequency capability and, considering today's wide spread use of wireless devices, thus indicates the much wider utility of CNF substrates than that has been demonstrated before. The demonstration may also pave the way toward portable green devices that would generate less persistent waste and save more valuable resources.

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“…The process simplicity, low-cost, lowtemperature processing are major plus points of this process along with high yield of the transfer process. Transistors and RF components fabrication using SOI-based Si micro-ribbons are transferred onto flexible substrate [59], [60].…”

Section: B Cmos Based Approachesmentioning

confidence: 99%

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

Shaikh

Ghoneim

Sevilla

et al. 2017

IEEE Trans. Electron Devices

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RF Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates Under Bending Conditions

Cited by 37 publications

References 17 publications

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Freeform Compliant CMOS Electronic Systems for Internet of Everything Applications

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