RF Compact Modeling of High-voltage MOSFETs

Abstract

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of these elements in HV state-of-the-art systems. In this paper, an RF model is presented and verified against extensive Y-parameter measurements, which were carried out on a long channel Lateral doubleDiffusion MOS device. Assessment of the model with measurements confirms the validity of this approach.

Large-Signal RF Modeling with the EKV3 MOSFET Model

“…The EKV3 is an analytical compact MOSFET (metal oxide semiconductor field effect transistor) model that relies on MOSFET's physics -the charge sheet theory -to describe its behavior. EKV3 is a representant of the "charge-based" MOS transistor compact models [4], [5]. It first calculates the dependence of the mobile inversion charge density Q i on the voltages applied to the transistor.…”

Statistical charge-based modeling of 1/f noise in standard and high-voltage MOS transistors

“…The usage of a bias-dependent resistance to model drift region offers fast convergency but fail to capture the physical phenomena that appear. This was addressed in [32,132] where a new full charge-based model for drift region of HV-MOSFETs was proposed. As mentioned above, a charge-based approach is applied both in the intrinsic part and the drift region.…”

“…The physics-based compact model proposed for drift region [32,132], considers this region as a simple one-dimensional problem, approach similar with charge-based LV model. It applies the charge sheet approximation and proves a linear relation between the charge in drift region and surface potential.…”

“…Our new compact 1/f noise model for LDMOSFETs is based on a new chargebased compact HV-MOSFET model recently established, which describes accurately the DC and RF behavior of the device covering both the drift region and the lowvoltage (LV) channel [31,32,132]. The modeling of the LV part of the HV-MOSFET is, in many ways, similar to the EKV3 compact model.…”

“…The HV-MOSFET compact model [32,132] provides a coherent description of all quantities of interest such as current, transconductances, etc., as functions of normalized inversion charges evaluated at source and K-point (Figure 2.16), q s , and q k , respectively. On the other hand, velocity saturation in the drift region, which is the cause of quasi-saturation in HV-MOSFETs, is modeled by a physics-based description [32].…”