In this study, a high-aspect-ratio metal is made by the standard through silicon via (TSV) process, and high-Q trenched spiral inductors can be realized by using the technology. The fabricated inductor has 60 µm signal height and its Q factor is more than 30 at 2 GHz. As a result, the Q factor of the trench inductor depends on signal spacing rather than signal width. The peak Q factor is maximized when the signal spacing is increased. To demonstrate the process technology, a 0.9 GHz low pass filter (LPF), which is can be used for the RF front-end of the GSM band, is designed and fabricated using the inductor. The realized LPF has very low insertion loss of only 0.355 dB at the pass band, and this value is an improvement of more than 28% compared with the normal LPF.