RF-LDMOS: a device technology for high power RF infrastructure applications

Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications

“…For base station LDMOS transistors this is typically at a current of 5 mA/mm gate width and a drain-source voltage of 28 V. The hot carrier degradation is routinely measured for such a period (typically 3 h to a few weeks) that a logarithmic slope can be used to extrapolate towards 20 years. This empirical method is common practise for this type of technology [4].…”

“…In this paper, we will compare the electromigration properties of the old (gold based, GEN4 and earlier) and new (aluminium based, GEN6 and later) metallisation schemes as used by Philips Semiconductors. The second main wear out mechanism is hot carrier degradation [4] which will also be compared for the old and new technologies.…”

“…Silicon based LDMOS technology is the leading technology for applications in RF base station power amplifiers and MMIC's [1][2][3][4] used for personal communication systems (GSM, EDGE, W-CDMA). Although new developments of compound semiconductors, such as GaAs, SiC and GaN [5], receive increasing attention, the Si based LDMOS technologies are still the preferred choice.…”

A compact high efficiency 8 kW 325 MHz power amplifier for accelerator applications

“…Further, due to significant improvement in manufacturing processes, MOSFET devices are made with better performance and ruggedness. As LDMOS transistor technology is evolving, we can expect further increase in power rating, reliability, efficiency of the devices [3,4]. This will help in reducing system cost of SSRFPA and enhances its competitiveness among other technologies.…”

Design and Simulation of a Wideband Hybrid EnvelopeTracking Power Amplifier Using LDMOS Transistor

“…Si-LDMOS has been a popular device choice for base-station high-power amplifiers, since LDMOS technology can provide reliable and cost effective solutions [19]. Envelope tracking techniques, in which a wideband envelope amplifier makes variable supply biasing to the RF stage, have established excellent performance using a variety of device technologies including Si LDMOS [20] and GaN FETs [21].…”