Wear out failure mechanisms in aluminium and gold based LDMOS RF power applications

Wel, P.J. van der; Theeuwen, S.J.C.H.; Bielen, J.A.; Li, Y.; Heuvel, R.A. van den; Gommans, J.G.; Rijs, F. van; Bron, P.; Peuscher, H.J.F.

doi:10.1016/j.microrel.2006.02.011

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Cited by 3 publications

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“…The last 5 years, LDMOS transistors for cellular base stations power amplifiers has gone through a tremendous development with a spectacular improvement in available output power, power gain, power added efficiency and linearity together with improvements in hot carrier reliability and thermal resistance [1,2]. This was fueled by introduction of new device architectures such as new shield construction and by introduction of LDMOS technology to advanced CMOS fabs.…”

Section: Introductionmentioning

confidence: 99%

Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications

Rijs

2008

2008 IEEE Radio and Wireless Symposium

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LDMOS technology is the main power amplifier technology used for cellular base stations for frequencies up to 2.14 GHz. With the latest LDMOS technology generations it is however possible, and demonstrated, to use LDMOS for frequencies up to 3.8 GHz. This paper describes the status and trends of LDMOS technology for wireless applications beyond 2.5 GHz.Index Terms -microwave power FET amplifiers , MOSdevices, MOSFET power amplifiers , power amplifiers.

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Section: Introductionmentioning

confidence: 99%