RF-magnetron sputtering deposition of ultra-thin Hf 0.5 Zr 0.5 O 2 films for non-volatile memory applications

Ambriz-Vargas, Fabian; Nouar, Rafik; Kolhatkar, Gitanjali; Sarkissian, A.; Thomas, Reji; Gómez-Yáñez, Carlos; Gauthier, Marc A.; Ruediger, Andréas

doi:10.1016/j.matpr.2017.07.030

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…Moreover, Fig. 4 shows that the two polarization states can remain stable up to 22 hours, suggesting a non-volatile character [9].…”

Section: Resultsmentioning

confidence: 96%

“…Hafnium zirconium oxide (Hf0.5Zr0.5 O2) has been identified as a promising material for such applications. While Hafnia (HfO2) and Zirconia (ZrO2), are already widely used in the semiconductor industry [6][7][8][9] as dielectric layers in current commercial devices such as DRAMs and ferroelectric field effect transistors (Fe-FETs), Hf0.5Zr0.5O2 presents a high CMOS compatibility due to its low crystallization temperature. In previous work, we fabricated resistive switching-based memory devices using ultra-thin (2.8 nm) ferroelectric Hf0.5Zr0.5 O2 films and direct tunneling [7].…”

Section: Introductionmentioning

confidence: 99%

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Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Kracklauer¹,

Ambriz-Vargas²,

Kolhatkar³

et al. 2019

Adv. Mater. Lett.

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The continued evolution of electronic devices relies on the development of new semiconductor memory technology. Given the high compatibility of the Hf0.5Zr0.5O2 thin films with the CMOS technology, we investigate the charge transport mechanisms that occur in a relative thick Hf0.5Zr0.5O2 thin film (4 to 6 nm-thick) when subjected to electrical stresses. To that end we fabricate Hf0.5Zr0.5O2 heterostructures with a Pt tip as the top electrode and TiN and Pt as bottom electrode by radio-frequency magnetron sputtering. After analyzing the surface morphology of the as-received and as-deposited films by atomic force microscopy, the transfer of the desired chemical stoichiometry from the sputtering target to the substrate surface is studied by Raman spectroscopy. The ferroelectricity of the Hf0.5Zr0.5O2 thin films is confirmed by piezoresponse force microscopy measurements, and a retention of 22 h is obtained, attesting to the non-volatility of the samples. Nanoscale electrical measurements reveal the presence of resistive switching, where the low resistance state (ON state) in both Pt-tip/Hf0.5Zr0.5O2/TiN and Pt-tip/Hf0.5Zr0.5O2/Pt heterostructures can be created by the formation of a conductive filament based on oxygen vacancies.

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“…Moreover, Fig. 4 shows that the two polarization states can remain stable up to 22 hours, suggesting a non-volatile character [9].…”

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Kracklauer¹,

Ambriz-Vargas²,

Kolhatkar³

et al. 2019

Adv. Mater. Lett.

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“…[ 8 ] Compared to various dopants into the hafnium oxide, [ 9–12 ] zirconium received the biggest attention due to the low annealing temperature, high scalability, and compatibility with the CMOS process. [ 13,14 ] Hafnium zirconium oxide (HZO) can achieve robust ferroelectric properties with metastable orthorhombic crystalline phase across a wide process window. [ 3 ] This finding led to a breakthrough in ferroelectric memory devices overcoming conventional perovskite material's issues, [ 15–17 ] which has become the most promising thin film for various memory technologies such as ferroelectric field‐effect transistors (FE–FETs) [ 18–20 ] and ferroelectric tunnel junctions.…”

Section: Figurementioning

confidence: 99%

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H₂O₂ Oxidant

Kim

Yun

Kim

et al. 2021

Physica Rapid Research Ltrs

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Hafnium zirconium oxide (HZO) has been studied intensively due to its potential application to memory and logic devices based on its outstanding dielectric and ferroelectric properties. Because many process factors can significantly impact the properties of HZO thin film, an optimized process or post-treatment is necessary to ensure its performance. Herein, the effect of hydrogen on HZO thin film can make the film degraded. Analysis of the polarization-voltage hysteresis loops and I-V measurements indicate a leaky behavior in the film. To address this issue, post-oxygen-plasma treatment is performed on the film, which results in the decrease in hydrogen ions inside the film and consequently reduces the leakage current density. This finding can provide new insight into the effect of hydrogen incorporation for HZO thin films and methodology to remove leaky components inside ferroelectric films using O 2 plasma treatment.

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Effect of the Hf content on the microstructure and ferroelectric properties of Hf_xZr_1−xO₂ thin films using an all-inorganic aqueous precursor solution

et al. 2021

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RF-magnetron sputtering deposition of ultra-thin Hf 0.5 Zr 0.5 O 2 films for non-volatile memory applications

Cited by 5 publications

References 20 publications

Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H₂O₂ Oxidant

Effect of the Hf content on the microstructure and ferroelectric properties of Hf_xZr_1−xO₂ thin films using an all-inorganic aqueous precursor solution

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RF-magnetron sputtering deposition of ultra-thin Hf 0.5 Zr 0.5 O 2 films for non-volatile memory applications

Cited by 5 publications

References 20 publications

Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant

Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1−xO2 thin films using an all-inorganic aqueous precursor solution

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Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H₂O₂ Oxidant

Effect of the Hf content on the microstructure and ferroelectric properties of Hf_xZr_1−xO₂ thin films using an all-inorganic aqueous precursor solution