rf‐MBE growth and characterizations of AlGaN/GaN HEMTs on vicinal sapphire (0001) substrates

Shen, Xu–Qiang; Sazawa, Hiroyuki; Okumura, Hajime

doi:10.1002/pssc.200778669

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…Moreover, the AlGaN/GaN/SiC MISHFETs show higher microwave output power than the HFET counterparts [3]. Various insulators have been used to investigate the properties of AlGaN/GaN MISHFETs on sapphire ( [4,5] and references therein) and SiC substrates ( [6,7] and references therein). However, less is reported on AlGaN/GaN MISHFETs on Si substrates according to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Gregušová¹,

Stoklas²,

Eickelkamp³

et al. 2009

Semicond. Sci. Technol.

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AlGaN/GaN/Si metal-insulator-semiconductor heterostructure field-effect transistors (MISHFETs) with SiN and Al 2 O 3 gate insulators are characterized by static and high-frequency measurements, and their performance is compared with nonpassivated and SiN-passivated heterostructure field-effect transistors (HFETs). The saturation drain current increased from ∼500 mA mm −1 for the HFETs to ∼770 mA mm −1 for the MISHFETs. The peak extrinsic transconductance of the MISHFETs (147 mS mm −1 for 8 nm SiN and 220 mS mm −1 for 4 nm Al 2 O 3 ) is higher than expected due to the increased gate-to-channel separation. Similarly, small signal microwave characterization yielded an increase in the current gain cut-off frequency (from 3.2 to 7.2 GHz) and the maximum frequency of oscillation (from 12.3 to 20.4 GHz) for the MISHFETs with 2 μm gate length compared to the HFET counterparts. Finally, the density of trap states, evaluated from the frequency-dependent conductance measurements, was ∼ =3 × 10 12 cm −2 eV −1 for the HFETs but only ∼ =1.8 × 10 12 cm −2 eV −1 for the MISHFETs. All of these demonstrate the capability of AlGaN/GaN MISHFETs of preparing high-performance and cost-effective devices for high-power microwave applications on a Si substrate.when compared with sapphire. Unfortunately, high-resistive SiC substrates are a costlier alternative to AlGaN/GaN devices. Devices on Si 8 , on the other hand, are the best solution considering their low cost, high crystalline perfection, good thermal conductivity and large-area availability of Si substrates.Recently, an excellent millimetre-wave performance (e.g. maximum frequency of oscillation of 110 GHz and noise figure of 1.3 dB at 20 GHz) has been reported on AlGaN/GaN-on-Si HFETs [1].

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Section: Introductionmentioning

confidence: 99%

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Gregušová¹,

Stoklas²,

Eickelkamp³

et al. 2009

Semicond. Sci. Technol.

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Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

et al. 2009

Superlattices and Microstructures

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Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Zhang

Sun

Song

et al. 2021

Applied Physics Letters

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In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on vicinal c-plane sapphire substrates with different misoriented angles are investigated. As the angle increases from 0.2°, 1.0° to 4.0°, an enlarged width and height of surface step bunching as well as significantly enhanced electron mobility from 957, 1123 to 1246 cm2/V s were measured. As a result, a large boost in the maximum output current (IDmax) from ∼300 mA/mm (on a 0.2° substrate) to ∼650 mA/mm (on a 4.0° substrate) can be observed. Importantly, HEMTs on 1.0° and 4.0° substrates exhibit an obvious anisotropic electrical behavior: the IDmax along the [11-20] orientation is larger than that along the [10-10] orientation. Such a difference becomes more distinct as the misoriented angle increases, attributing to the lifted step height that would introduce a potential barrier for the electron transport along the [10-10] orientation. In short, this work demonstrates an effective approach toward the realization of high-performance HEMTs with anisotropic electrical behavior on a single device platform.

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rf‐MBE growth and characterizations of AlGaN/GaN HEMTs on vicinal sapphire (0001) substrates

Cited by 3 publications

References 11 publications

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-frequency measurements

Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

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