RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

“…It is found that cubic InN grown on MgO(100) by PLD at 440 1C has a phase purity of 99%, as shown in Fig. 29, which is much better than that of cubic InN grown by MBE [101]. This result can be ascribed to the fact that pulsed laser generated in PLD can ensure enough kinetic energy for the migration of precursors, and eventually benefits the formation of cubic InN.…”

“…24, MgO(100) is promising for growth of cubic group III-nitride films, while MgO(111) shows potential for growth of hexagonal group III-nitride. Scientists have tried to grow high-quality group III-nitride films on MgO by MBE or radiofrequency magnetron sputtering technology [96][97][98][99][100][101]. However, due to the high Mg partial pressure of MgO, serious interfacial reaction will take place between the film and the substrate, which severely deteriorates the quality of group IIInitride films [96][97][98][99].…”

“…However, due to the high Mg partial pressure of MgO, serious interfacial reaction will take place between the film and the substrate, which severely deteriorates the quality of group IIInitride films [96][97][98][99]. Meanwhile, when growing the cubic IIInitrides by MBE, hexagonal III-nitrides will be mixed into the cubic films, and therefore its phase purity of the as-grown film is damaged [101]. In order to solve these problems, PLD is deployed to grow high-quality group III-nitride films on MgO substrates [40][41][42]102,103].…”

Numerical Simulation of Rapid Nitriding of Aluminum via Pulsed Laser

“…Self-propagating high-temperature synthesis is a representative method to prepare AlN powder . Magnetron sputtering, vacuum arc discharge, and atmospheric plasma spraying are the methods commonly used to synthesize thin AlN films; − (3) Nitrogen-containing gases interact with highly volatile inorganic aluminum compounds. Chemical vapor deposition is the most representative of the methods, which could synthesize high-purity AlN in one step; − (4) Aluminum compounds interact with nitrogen-containing organic compounds at a synthesis environment with both high temperatures and pressures; (5) Polymorphic transition of AlN methods including conventional phase transformation techniques at ultrahigh pressures, aerosol deposition method, and laser nitriding (LN) method. − …”