RF MEMS phase shifters: design and applications

Rebeiz, Gabriel M.; Tan, Guan-Leng; Hayden, Joseph S.

doi:10.1109/mmw.2002.1004054

Cited by 223 publications

(95 citation statements)

References 16 publications

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“…RF MEMS switches are devices for signal processing at high frequencies, ideal candidates for substituting pin diodes in many applications, from redundancy switches, to phase shifters and matrices, even for space systems [1], [2], [3], [4]. They take advantage from being all passive devices, with no distortion and linear phase response.…”

Section: Analytical Model Of the Rf Mems Switchmentioning

confidence: 99%

Mechanical modelling of capacitive RF MEMS shunt switches

et al. 2010

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Section: Analytical Model Of the Rf Mems Switchmentioning

confidence: 99%

Mechanical modelling of capacitive RF MEMS shunt switches

et al. 2010

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“…5(c). The pull-down and hold-down voltages correspond to two different steady-state charge densities predicted by (4). For the dual-pulse waveform shown in Fig.…”

Section: Dual-pulse Actuationmentioning

confidence: 96%

“…N THE past decade, RF microelectromechanical system (MEMS) has emerged as a promising technology for lowloss switch, phase shifter, and reconfigurable network applications [1]- [4]. However, commercialization of RF MEMS devices is hindered by the need for continuing improvements in reliability and packaging.…”

mentioning

confidence: 99%

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

Yuan

Peng

Hwang

et al. 2006

IEEE Trans. Electron Devices

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Abstract-A transient simulation program with integrated circuit emphasis (SPICE) model for dielectric-charging effects in RF microelectromechanical system (MEMS) capacitive switches was developed and implemented in a popular microwave circuit simulator. In this implementation, the dielectric-charging effects are represented by R-C subcircuits with the subcircuit parameters extracted from directly measured charging and discharging currents in the picoampere range. The resulted model was used to simulate the actuation-voltage shift in switches due to repeated operation and dielectric charging. Agreement was obtained between the simulated and measured actuation-voltage shift under various control waveforms. For RF MEMS capacitive switches that fail mainly due to dielectric charging, the present SPICE model can be used to design control waveforms that can either prolong lifetime or accelerate failure.

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“…Solid-state switches are highly integrable and have switching speeds under 10ns, however they have higher static power dissipation and insertion loss, lower linearity, and are narrow band compared to RF MEMS switches [1][2][3][4][5][6][7][8]. The benefits of RF MEMS ohmic and capacitive switches in terms of static power dissipation, insertion loss, linearity, and bandwidth enable low-loss circuits such as phase shifters [9], tunable filters [10][11][12][13][14] and networks, and reconfigurable antennas for applications in miniaturized synthetic aperture radar, satellite communications, portable ground-based communications, miniaturized transceivers for autonomous sensor arrays, and RF tags. Switch insertion loss and isolation of 0.1 dB and 30 dB, respectively, from 0-40 GHz have been demonstrated [7].…”

Section: Introductionmentioning

confidence: 99%

Si-based RF MEMS components.

Stevens¹,

Nordquist²,

Baker³

et al. 2005

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Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

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RF MEMS phase shifters: design and applications

Cited by 223 publications

References 16 publications

Mechanical modelling of capacitive RF MEMS shunt switches

Mechanical modelling of capacitive RF MEMS shunt switches

A transient SPICE model for dielectric-charging effects in RF MEMS capacitive switches

Si-based RF MEMS components.

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