RF modeling and parameter extraction for GaAs‐based on‐chip inductors

Abstract

RF modeling and equivalent circuit model parameter extraction for GaAs‐based on‐chip inductors are presented in this article. An improved model that takes into account of the substrate loss effects based on the S parameters on wafer measurement is proposed. The parameter extraction method combines the analytical expressions and the empirical optimization procedure, which does not require any additional test structures. The intrinsic elements determined by utilizing the analytical method are described as functions of the parasitic elements. After that, an advanced design system is used to optimize the parasitic parameters with very small dispersion of initial values. Good agreement is obtained between the simulated and measured data up to 50 GHz.

Automatic Design of Planar Spiral Inductors Based on Improved Artificial Bee Colony Algorithm

“…To reduce the cost and improve the design efficiency of the inductance, the design parameters of the inductance are obtained to simplify the design flow through the equivalent circuit model of the inductance. Many equivalent circuit models [3][4][5] of the inductance are presented, but many drawbacks exist in these models including poor universality and not being suitable for GaAs substrate. To reflect the electric characteristics more accurately, it is necessary to propose an equivalent model of the inductance with high universality suitable for GaAs substrate.…”