RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

“…Recently, Baca et al evaluated the radio frequency (RF) performance of AlGaN channel HEMTs with 80-nm long gate. The f T of 28.4 GHz and f MAX of 18.5 GHz were determined from small signal S-parameter measurements [12]. These results illustrate the promise of AlGaN channel HEMTs for RF power applications.…”

“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (V b ) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13][14][15]. Nanjo Zhang et al fabricated the AlGaN channel HEMTs with a novel ohmic/Schottky-hybrid drain contact, and a record high breakdown voltage of more than 2200 V was obtained for the AlGaN channel HEMTs [11].…”

High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage

“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (BV) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13]. Recently, the successful implementation of AlGaN channel metal-oxidesemiconductor field-effect-transistors (MOSFETs) have also been reported [14].…”

High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage

“…Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (V b ) and improving the device reliability at high temperatures. Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13][14][15]. [12].…”

“…Therefore, in view of the larger bandgap and superior thermal stability of AlGaN over GaN, AlGaN channel devices have been proposed as promising candidate to further improve the performance limits of nitride HEMTs in high-voltage and high-temperature applications [6][7][8][9][10][11][12][13][14][15]. [12]. These results illustrate the promise of AlGaN channel HEMTs for RF power applications.…”