In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I max) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0 V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics but also develop a new thinking for the studies of group III nitride-based electronic devices.

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In this work, an aqueous solution method that entails processing at low temperatures is utilized to deposit a ZnO interlayer in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl C61 butyric acid methyl ester-based inverted polymer solar cells (PSCs). The effect of ZnO annealing temperature from 50 to 150 °C on PSC performance is systemically studied and it is found that the transition point is approximately 80 °C. When the ZnO annealing temperature is higher than 80 °C, PSCs show similar current density–voltage (J–V) characteristics and achieve a power conversion efficiency higher than 3.5%. Transmittance spectrum, PL spectrum, and surface morphology studies show that an annealing temperature above 80 °C is sufficient for ZnO to achieve a relatively good quality, and that a higher temperature only slightly improves ZnO quality, which is confirmed from statistical results. Furthermore, flexible PSCs based on PET substrates show a comparable power conversion efficiency and good flexibility.

Low-temperature processes are unremittingly pursued in the fabrication of organic solar cells. The paper reports that the highly efficient and "light-soaking"-free inverted organic solar cell can be achieved by using ZnO thin films processed from the aqueous solution method at a low temperature. The inverted organic solar with an aqueous-processed ZnO thin film annealed at 150 °C shows an efficiency of 3.79%. Even when annealed at a temperature as low as 80 °C, the device still shows an efficiency of 3.71%. With the proper annealing temperature of 80 °C, the flexible device, which shows an efficiency of 3.56%, is fabricated on PET. This flexible device still keeps the efficiency above 3.40% after bent for 1000 times with a curvature radius of 50 mm. In contrast, a low annealing temperature leads to an inferior device performance when the ZnO thin film is processed from the widely used sol-gel method. The device with sol-gel processed ZnO annealed at 150 °C only shows a PCE of 1.3%. Furthermore, the device shows a strong "light-soaking" effect, which is not observed in the device containing an aqueous-processed ZnO thin film. Our results suggest that the adopted aqueous solution method is a more efficient low temperature technique, compared with the sol-gel method.

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