2022 IEEE International Reliability Physics Symposium (IRPS) 2022
DOI: 10.1109/irps48227.2022.9764465
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RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications

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Cited by 4 publications
(1 citation statement)
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“…The transistor behavior changes drastically at such low temperatures and these changes must be correctly modelled for accurate CAD (Computer Aided Design) simulations. Research on RF CMOS and CMOS scaling with FinFETs and nanowire FETs is also on-going to further reduce the transistor feature size [3], [4], [5], [6], [7].…”
Section: Introductionmentioning
confidence: 99%
“…The transistor behavior changes drastically at such low temperatures and these changes must be correctly modelled for accurate CAD (Computer Aided Design) simulations. Research on RF CMOS and CMOS scaling with FinFETs and nanowire FETs is also on-going to further reduce the transistor feature size [3], [4], [5], [6], [7].…”
Section: Introductionmentioning
confidence: 99%