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The hot carrier degradation of short channel NMOS-FET's (L L L EFF = = = 0.07-0.10 m) stressed at 2.0 V V DS V DS V DS 2.9 V and a wide V GS V GS V GS range is shown NOT to obey the classic hot carrier "lucky electron model." In the low and mid V GS V GS V GS range, the degradation behavior is better described by an effective electron temperatures model proposed here, which takes e-e scattering effects into account. In the high V GS V GS V GS regime, a further lifetime reduction can be qualitatively explained within this model by the increase in electron concentration at the Si-SiO 2 interface near the drain region.Index Terms-Accelerated stress, e-e scattering, effective electron temperatures, hot carrier degradation, interface state generation, lifetime projection, lucky electron model, reliability.

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