RF simulations and physics of the channel noise parameters within MOS transistors

Manku, T.; Obrecht, M.S.; Lin, Yi-Min

doi:10.1109/cicc.1999.777308

Cited by 12 publications

(11 citation statements)

References 5 publications

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“…However, for short channel devices the parameter r has been observed to be greater than 2/3 (see [9,15]); when a device length of lOllm was simulated using the noise simulator a y value of 0.7 was obtained. The question is 'where is this excess noise coming from in a short channel device?'…”

Section: Lddnmos Leff=o45 J1mmentioning

confidence: 97%

“…Frequency (GHz) Figure 4: The contribution of the gate noise at the output compared to drain channel noise [15]. 253 An important quantity is the relative magnitudes of Ii to IJ.…”

Section: Lddnmos Leff=o45 J1mmentioning

confidence: 99%

“…Using this information, one can obtain the power spectrum densities as well as the correlation factors. This is done using the following equation (see [14,15] and the papers within);…”

Section: Physical Noise Sourcesmentioning

confidence: 99%

“…The numerical simulations are based on a quasi 3-D device noise simulator [14] developed at the University of Waterloo. A brief description of the physics involved with the numerical procedure is provided below -a more detailed description can be found in [14] and [15].…”

Section: Physical Noise Sourcesmentioning

confidence: 99%

“…In this paper the physical origins of the various noise sources within a MOSFET are described with the help of a quasi 3-D microwave noise simulator [14,15] coupled with measurement results.…”

Section: Introductionmentioning

confidence: 99%

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Microwave Noise Modeling of CMOS Transistors

Manku

1999

Analog Circuit Design

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In this paper we systematically develop an understanding of the noise behavior within MOS devices operating at microwave frequencies. A bottom to top approach is taken to accomplish this -device physics to network modeling to device layout. Our hope is that the results within this paper will provide RF CMOS circuit designers with a better understanding of the noise properties of MOS devices as well as to help them design better low noise amplifiers and mixers.

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Section: Lddnmos Leff=o45 J1mmentioning

confidence: 97%

“…Frequency (GHz) Figure 4: The contribution of the gate noise at the output compared to drain channel noise [15]. 253 An important quantity is the relative magnitudes of Ii to IJ.…”

Section: Lddnmos Leff=o45 J1mmentioning

confidence: 99%

“…Using this information, one can obtain the power spectrum densities as well as the correlation factors. This is done using the following equation (see [14,15] and the papers within);…”

Section: Physical Noise Sourcesmentioning

confidence: 99%

Section: Physical Noise Sourcesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Microwave Noise Modeling of CMOS Transistors

Manku

1999

Analog Circuit Design

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Comparison of phase noise models on a class of ring oscillators using low voltage swing fully differential delay cells

Leung

2009

Analog Integr Circ Sig Process

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This paper compares the phase noise models on a class of differential saturated ring oscillator with low voltage swing. Variance parameter/single stage jitter is used as the metric for comparison. When first passage time (fpt) is employed, first for the simple case of the RC representation of the differential pair, an exact expression involving the parabolic cylinder function is used in this comparison. Then for the general case, the expression using time scaling is used for comparison. On the last passage time (lpt) model, the probability distribution function (pdf) of lpt is used to further differentiate the models. The fpt part in the complete lpt pdf is identified. Comparison of the phase noise's power spectral density expression is then presented. The phase noise expression of this author does not go to infinity as offset frequency approaches zero. Finally simulation results on example designs are presented, where it is shown that the model by this author, when compared to other models, can improve accuracy by 7-10 dBc/Hz.

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