RF sputtering deposition of Ag/ITO coatings at room temperature

Bertrán, E.; Corbella, Carles; Vives, M.; Pinyol, A.; Person, Carles; Porqueras, I.

doi:10.1016/j.ssi.2003.08.055

Cited by 70 publications

(18 citation statements)

References 8 publications

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“…This behavior is called the Burstein-Moss effect. In this study, a blue-shift occurred in the reflectance spectra at the position of the absorption edge, and an absorption valley during the activation process (thermal treatment in this case) where free electrons were produced (substituting Sn atoms for In atoms 9 ). The observed blue-shift can likely be ascribed to the Burstein-Moss effect.…”

Section: Resultsmentioning

confidence: 73%

Reflectivity and Abnormal Absorption at ITO/Al Interface

Lin

Liu

2008

Journal of Elec Materi

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The electrical and optical thermal stability of indium tin oxide (ITO)/Al bilayers are investigated in this study. The electrical resistivity of ITO and ITO/Al multilayers, both about 1 9 10 -3 X cm after annealing at 300°C for 1 min, are measured by the four-probe measurement method. In addition to the electrical measurements, we also observe the rapid initial diffusion of Al atoms into the ITO thin films. When the diffusing elemental Al atoms occupy interstitial sites they tend to form defects, causing a serious decrease in the reflectance of the a-ITO/Al bilayer in the wavelength region from 400 nm to 600 nm.

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Section: Resultsmentioning

confidence: 73%

Reflectivity and Abnormal Absorption at ITO/Al Interface

Lin

Liu

2008

Journal of Elec Materi

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“…On one hand, the TCFs of bilayer structure, e.g., semiconductor/semiconductor [16][17][18] and semiconductor/metal [19][20][21] bilayer films, were studied by some authors. On the other hand, TCF/metal/TCF trilayer structures 22 were rapidly developed since they might provide optical and electrical characteristics superior to those single-layer or bilayer TCFs.…”

Section: Introductionmentioning

confidence: 99%

“…The electric and optical behaviors of IAI films strongly [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] have led to significant improvement on the performance of IAI trilayer electrodes.…”

Section: Introductionmentioning

confidence: 99%

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

2017

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ITO/Ag/ITO (IAI) trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM) reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

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“…Tin-doped indium oxide (ITO) thin films have been used extensively as transparent conductive electrodes in a range of photo-electronic devices, such as liquid crystal displays (LCDs), organic light emitting diodes (OLED), thin film transistors (TFTs), and solar cells because of its excellent electrical, optical properties, and chemical stability [1][2][3][4][5]. ITO is an n-type semiconductor with a wide band gap between 3.3 and 4.3 eV at room temperature with a bixbyte structure.…”

Section: Introductionmentioning

confidence: 99%