Rhodamine 6G and phloxine B as photosensitizers for inkjet-printed indium oxide phototransistors

Gillan, Liam; Liu, Fei; Aikio, Sanna; Leppäniemi, Jaakko

doi:10.1039/d2tc02054h

Cited by 1 publication

(1 citation statement)

References 62 publications

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“…[20,21] Gillan et al reported that many oxide semiconductors such as In 2 O 3 have a large bandgap >3 eV, which leads to a wavelength detection range limited to blue or UV light. [22] Like other studies, we also investigated the effect of light on the device. [23] The transfer curves measured under dark conditions are basically the same as those under natural light, indicating that natural light has no effect on the TFT's performance and the device possesses good stability (see Figure 2a).…”

Section: Resultsmentioning

confidence: 99%

Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

Yuan

Dou

Gan

et al. 2023

Physica Rapid Research Ltrs

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Herein, junctionless thin‐film transistors (TFT) with indium‐oxide (In2O3) as the n‐channel active layer are prepared on transparent substrates by magnetron sputtering at room temperature. Chitosan with an electric‐double‐layer (EDL) effect as a gate dielectric enables the device to achieve low‐voltage operation, thus reducing energy consumption. The device maintains its performance in dark or illuminated conditions and has good performance with a mobility of 0.21 cm2 V−1s−1, a current on/off ratio of 6.5 × 106, and a subthreshold swing of 66 mV decade−1. The device implements “OR” and “AND” logic functions at different voltage levels. The In2O3 TFT is ideally suited for prospective applications in large‐area electronics and flexible electronics due to its exceptional device performance and low fabrication temperature.

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