Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Zhang, Shuo; Xie, Hao; Huang, Jun; Chen, Wenchao; Liao, Jie; Yin, Wen-Yan

doi:10.1109/ted.2022.3188231

Cited by 4 publications

(1 citation statement)

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“…Mincheol Shin et al developed a highly efficient computational simulator by reducing the Hamiltonian size through transformation to the mode-space basis [18][19][20][21]. Full quantum transport simulations of largescale NWFETs based on the k • p mode-space method often effectively reduce computational costs [20,22,23]. As the device is miniaturized and the material approaches the nanoscale, many parameters of the bulk material fail due to significant quantum effects, surface effects, lattice distortions, defects, etc.…”

Section: Introductionmentioning

confidence: 99%

Quantum transport for gate length scaling limit of Si NWFETs based on calibrated k·p Hamiltonian parameters

Wu,

Zhan,

Zhu

et al. 2024

Preprint

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We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (Si NWFETs) at the scaling limit. The Si bulk $\bm{k}\cdot\bm{p}$ Hamiltonian parameters are rendered invalid at smaller scales due to pronounced quantum confinement effects. Consequently, nanowire $\bm{k}\cdot\bm{p}$ Hamiltonian parameters are meticulously calibrated using first-principle HSE06 band structures through the fast least square method. Based on the Non-Equilibrium Green's functon(NEGF) formalism, we systematically analyze the performance limits of \textrm{Si} gate-all-around NWFETs under varying gate lengths. With diminishing gate lengths, quantum tunneling from source to drain intensifies, leading to a degradation in subthreshold swing. Our findings reveal that the gate length scaling limit for N-type devices surpasses that of P-type devices, and distinct gate scaling limits are elucidated for varying cross-sectional sizes, for instance, the ultimate scaling limit of a 4 nm $\times$ 4 nm cross-section Si nanowires is approximately 10 nm.

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