Rigorous theory of the diffraction of Gaussian beams by finite gratings: TE polarization

Sumaya-Martinez, J.; Mata-Méndez, O.; Chavez-Rivas, F.

doi:10.1364/josaa.20.000827

Cited by 13 publications

(7 citation statements)

References 23 publications

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“…Traditionally, the procedure of the imposition of the continuity is different for TE and TM polarizations (see Ref. [28,29] for examples). The main reasoning behind that is an optimal convergence.…”

Section: Boundary Value Problem At the Interfaces And Energy Flow Betmentioning

confidence: 99%

Interaction of highly focused vector beams with a metal knife-edge

Marchenko¹,

Orlov²,

Huber³

et al. 2011

Opt. Express

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We investigate the interaction of highly focused linearly polarized optical beams with a metal knife-edge both theoretically and experimentally. A high numerical aperture objective focuses beams of various wavelengths onto samples of different sub-wavelength thicknesses made of several opaque and pure materials. The standard evaluation of the experimental data shows material and sample dependent spatial shifts of the reconstructed intensity distribution, where the orientation of the electric field with respect to the edge plays an important role. A deeper understanding of the interaction between the knife-edge and the incoming highly focused beam is gained in our theoretical model by considering eigenmodes of the metal-insulator-metal structure. We achieve good qualitative agreement of our numerical simulations with the experimental findings.

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Section: Boundary Value Problem At the Interfaces And Energy Flow Betmentioning

confidence: 99%

Interaction of highly focused vector beams with a metal knife-edge

Marchenko¹,

Orlov²,

Huber³

et al. 2011

Opt. Express

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show abstract

“…Since, multiphoton microscopy often utilizes objectives with NAs larger than 0.7 it is important to consider this deviation. The study of image formation with diffracted light is a rich and active field stemming from early papers that laid the foundation [301,302] to contemporary research [106,303–305]. Other documents of interest include [99,101,104], and specifically [103], which deals with confocal microscopy, and books [100,105,110,306].…”

Section: The Objective Lensmentioning

confidence: 99%

A pragmatic guide to multiphoton microscope design

et al. 2015

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Multiphoton microscopy has emerged as a ubiquitous tool for studying microscopic structure and function across a broad range of disciplines. As such, the intent of this paper is to present a comprehensive resource for the construction and performance evaluation of a multiphoton microscope that will be understandable to the broad range of scientific fields that presently exploit, or wish to begin exploiting, this powerful technology. With this in mind, we have developed a guide to aid in the design of a multiphoton microscope. We discuss source selection, optical management of dispersion, image-relay systems with scan optics, objective-lens selection, single-element light-collection theory, photon-counting detection, image rendering, and finally, an illustrated guide for building an example microscope.

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“…When illuminating beam spot moves across the via arrays target, the intensity of reflected light oscillates due to vias moving in and out of beam spot. Mata-Mendez and Chavez-Rivas 23 have estimated that for grating with line-to-space ratio of 1∶1, the amplitude of oscillation becomes negligible when the minimal number of gratings inside the beam spot is two, which is corresponding to 50% of the illuminated surface areas. For the HDTSV array structure of few microns via size, the ratio of the illuminated area of the top silicon surface to the via's opening within the illuminated area is considered to be constant, and it depends only on the via's opening shape and pitch.…”

Section: Tsv Array Structurementioning

confidence: 99%

Spectral reflectometry for metrology of three-dimensional through-silicon vias

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The technology for semiconductor device packaging is rapidly advancing in response to increasing demand for smaller and thinner electronic devices. Three-dimensional chip stacking that uses through-silicon vias (TSVs) is a key area of technical focus, and the high-density TSV (HDTSV) is a major enabler of threedimensional (3-D) integrated circuit technology. The ongoing development of this novel technology has created a need for noncontact characterization. One of the main challenges for 3-D TSV metrology is measuring high aspect ratio features that limit conventional optical microscopy techniques. We demonstrate the use and enhancement of an existing wafer metrology tool, a spectral reflectometer, by developing and implementing theoretical models and measurement algorithms for inspection of HDTSVs. It is capable of measuring the depth of vias, and can also be used for the estimation of bottom roughness and bottom shapes of vias through the model fitting. Our nondestructive solution has measured TSV diameters as small as 3 μm and aspect ratios >16.5∶1. Submicron depth measurement accuracy has been verified in the range of 30 to 60 μm on via depth. Metrology results from actual wafers formed from 3-D interconnect processing are presented. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

show abstract

Rigorous theory of the diffraction of Gaussian beams by finite gratings: TE polarization

Cited by 13 publications

References 23 publications

Interaction of highly focused vector beams with a metal knife-edge

Interaction of highly focused vector beams with a metal knife-edge

A pragmatic guide to multiphoton microscope design

Spectral reflectometry for metrology of three-dimensional through-silicon vias

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