Robust 12T Sram Cell Using 45nm Technology

Abstract

SRAM cells are used in many applications such as micro and multi core processor. SRAM cell improves both read stability and write ability at low supply voltage. The objective is to reduce the power dissipation of a novel low power 12T SRAM cell. This method removes half-select issue in 6T and 9T SRAM cell. This work proposes new functional low-power designs of SRAM cells with 6T, 9T and 12 transistors which operate at only 0.4V power supply in sub-threshold operation at 45 nm technology. The leakage power consumption of the proposed SRAM cell is thereby reduced compared to that of the conventional six-transistor (6T) SRAM cell. 12T cell obtains low static power dissipation.