Robust and energy-efficient carbon nanotube FET-based MVL gates: A novel design approach

Sharifi, Fazel; Moaiyeri, Mohammad Hossein; Navi, Keivan; Bagherzadeh, Nader

doi:10.1016/j.mejo.2015.09.018

Cited by 44 publications

(22 citation statements)

References 23 publications

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“…Therefore, if k is assumed to be an integer number, m–n = 3 k defines the conducting behavior for the SWCNT structure, while m–n ≠ 3 k defines the semiconducting behavior for the CNT structure . Therefore, assuming the lattice constant is defined as a = 2.49 Å, the diameter of a CNT structure ( D CNT ) can be expressed as follows :

D_{CNT} = \frac{a \sqrt{m^{2} + n^{2} + italicmn}}{π}

…”

Section: Cntfet Technologymentioning

confidence: 99%

“…Therefore, if k is assumed to be an integer number, m-n = 3 k defines the conducting behavior for the SWCNT structure, while m-n 6 ¼ 3 k defines the semiconducting behavior for the CNT structure. [18][19][20] Therefore, assuming the lattice constant is defined as a = 2.49 Å, the diameter of a CNT structure (D CNT ) can be expressed as follows 16,17,[19][20][21] : Figure 1B shows the physical structure of a sample CNTFET in which the semiconducting doped nanotubes are considered as the channel region, which is controlled by V GS , similar to a typical MOSFET device. 22 The threshold voltage (V T ) of the CNTFET can be approximately expressed as Equation (2), where q is the electric charge of an electron, and V π = 3.033 eV is the carbon π-π bond energy.…”

Section: Cntfet Technologymentioning

confidence: 99%

“…Some of the advantages of CNTFETs are: higher mobility of carriers due to the quasi‐ballistic transfer, small chip size, lower intrinsic delay due to lower parasitic capacitances, better ( g m / I D ) characteristics versus normalized drain current

([], I_{n} = I_{D} / ((), \frac{W}{L}))

. Giving the above facts, CNTFETs are widely used in the design of digital integrated circuits such as full adders and multiplexers . Therefore, design of analog integrated circuits such as active filters in the CNTFET technology still demands much scientific effort …”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17] Therefore, carbon nanotube field-effect transistor (CNTFET) with MOSFET-like behavior is a promising candidate for replacing the CMOS technology. [16][17][18][19][20][21] Some of the advantages of CNTFETs are: higher mobility of carriers due to the quasi-ballistic transfer, small chip size, lower intrinsic delay due to lower parasitic capacitances, better (g m /I D ) characteristics versus normalized drain current…”

Section: Introductionmentioning

confidence: 99%

“…Giving the above facts, CNTFETs are widely used in the design of digital integrated circuits such as full adders and multiplexers. [19][20][21] Therefore, design of analog integrated circuits such as active filters in the CNTFET technology still demands much scientific effort. 16,17 The main objective of this article is to present a new universal and mixed-mode filter that can be used as input/middle stage in the target applications such as radio-frequency identification (RFID), analog FM broadcasting, and over the horizon (OTH) radar systems.…”

Section: Introductionmentioning

confidence: 99%

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A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Zanjani

Dousti

Dolatshahi

2018

Int J RF Microw Comput Aided Eng

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This paper presents a new low‐voltage and low‐power mixed‐mode universal active filter, using only 12 carbon nanotube field effect transistors (CNTFETs) and 2 grounded capacitors to improve the noise performance of the proposed circuit. Due to the use of subthreshold transistors biased at ±0.2 V supply voltage, the power consumption of the proposed multi input‐single output (MISO) filter is only 850 nW at 19 MHz center frequency. On the other hand, relaxing from any matching components, the center frequency and quality factor of the proposed filter can be tuned electronically with low sensitivity to the values of the active and passive elements. Furthermore, the active chip area of the proposed filter is significantly reduced to 0.047 μm2, in 32 nm CNTFET technology. Therefore, as the HSPICE simulation results show, the input referred noise values at 19 MHz are reduced to 15.5 nV/Hz and 185 fA/Hz in voltage and current modes, respectively. It is also shown that, by changing the number of nanotubes in the CNTFET structure, a very good power‐frequency trade‐off can be achieved for low‐power GHz applications.

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D_{CNT} = \frac{a \sqrt{m^{2} + n^{2} + italicmn}}{π}

…”

Section: Cntfet Technologymentioning

confidence: 99%

Section: Cntfet Technologymentioning

confidence: 99%

([], I_{n} = I_{D} / ((), \frac{W}{L}))

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Zanjani

Dousti

Dolatshahi

2018

Int J RF Microw Comput Aided Eng

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Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

et al. 2022

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Figure 8. Single-electron transistors (SETs). a) Schematic structure and b) transfer I-V characteristic of a typical SET. c) Schematic diagram and scanning electron microscopy image of the two-gate SET. d) Transfer I-V characteristic of the two-gate SET at V in2 = 0 V and 0.2 V. c,d) Reproduced with permission. [18] Copyright 2000, IEEE. e) Circuit diagram of the universal literal gate and its periodic V in −V out characteristic. Reproduced with permission. [98] Copyright 2003, IEEE. f) Schematic of the two-input hybrid MOSFET-SET device. g) The output voltage as a function of two input gate voltages. f,g) Adapted with permission. [103] Copyright 2009, IEEE. h,i) Schematic diagram of the Si EQD SET (h) and its typical two-peak transfer characteristic (i). j) Contour plot demonstrating I D as a function of V DS and V G enabling ternary and quaternary operation regimes. h-j) Reproduced with permission. [105]

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A CNT based VCO with extremely low phase noise and wide frequency range for PLL application

Sarbazi

Sabbaghi‐Nadooshan

Hassanzadeh

2021

Int J Numerical Modelling

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Voltage controlled oscillators (VCOs) are used as key components in phase‐locked loop systems for generating stable oscillation signals. Since the digital electronics industry increasingly needs a faster operation, VCOs need to generate signals at higher frequencies. This paper presents a voltage controlled oscillator with a wide frequency range and very low phase noise by using carbon nanotube technology. The Stanford CNTFET model is implemented in Verilog‐A, and the proposed CNTFET VCO is simulated using ADS software. Simultaneous use of forward bulk biasing and an inductor yields a carbon nanotube oscillator with a frequency range of 6‐20 GHz and a phase noise of −123 dBc/Hz.

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Robust and energy-efficient carbon nanotube FET-based MVL gates: A novel design approach

Cited by 44 publications

References 23 publications

A CNTFET universal mixed‐mode biquad active filter in subthreshold region

A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

A CNT based VCO with extremely low phase noise and wide frequency range for PLL application

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