A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Zanjani, S. Mohammadali; Dousti, Massoud; Dolatshahi, Mehdi

doi:10.1002/mmce.21574

Cited by 14 publications

(7 citation statements)

References 26 publications

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“…Further, Table 3 shows that the CNTFET‐AGI is outperforming the CMOS‐AGI in terms of power dissipation, temperature insensitivity behavior, and Q factor with reduced die area of 0.16 μm 2. 41 Also, the proposed circuit is outperforming the conventional one in the in‐noise and out‐noises parameters also. This clearly shows that the proposed CNTFET‐AGI is more reliable and robust than the conventional CMOS‐AGI.…”

Section: Realization Of Agi Using the Proposed Cciismentioning

confidence: 86%

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Jogad

Alkhammash

Afzal

et al. 2021

Int J Numerical Modelling

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In this work, we design and simulate novel 32 nm carbon nanotube field effect transistor (CNTFET) as well as complementary metal oxide semiconductor (CMOS)‐based negative class AB second generation current conveyors (CC) (CNTFET‐CCII and CMOS‐CCII−). The comparative analyses of various performance measuring parameters of both these CCII's have been performed. A significant improvement in current and voltage bandwidths, terminal X and Y impedances at lesser total harmonic distortions and reduced power consumption have been observed in the proposed CNTFET‐based CCII− in comparison to its CMOS‐based counterpart. Further, a CNTFET‐based active grounded inductor (AGI) has been designed and simulated for the first time using the proposed CNTFET‐CCII− and our recently designed CNTFET‐CCII+ and has been compared with the CMOS‐based AGI. To validate the performance of the simulated AGI's, single input multi output current mode filter and third‐order high pass Butterworth filter have also been designed and simulated. The simulation results reveal that the performance of the CNTFET‐AGI‐based applications are close to ideal response with less power consumption and temperature insensitivity with reduced active chip die area of 0.16 μm2 and can be efficiently used for low voltage, low power, and high frequency applications.

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Section: Realization Of Agi Using the Proposed Cciismentioning

confidence: 86%

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Jogad

Alkhammash

Afzal

et al. 2021

Int J Numerical Modelling

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“…Marani et al reported improvement in DC gain by 17%, 40% less power consumption, and a decrease in output resistance by 90% in comparison to CMOS OTA [7]. Low power mixed-mode active fi lter using 12 CNT and 2 capacitors was presented by Zanjani et al [14]. Jooq et al designed CNTFET based ring oscillators suitable for the internet of things (IoT) applications [17].…”

Section: Univerzalni Filtri In Oscilatorji Na Osnovi Napetostnega Tramentioning

confidence: 99%

“…Where, tight binging energy t is 3.0eV (also referred to as C-C bonding energy) and C-C bonding distance a cc of the nearest neighbor is 1.42A o . Whereas, equations for CNT diameter CNTFET threshold are given as [13]- [14]:…”

Section: Carbon Nanotube Field-effect Transistors Fundamentalsmentioning

confidence: 99%

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology

Mamatov

2021

Informacije MIDEM

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Carbon nanotube fi eld-eff ect transistor (CNTFET) is a strong candidate to replace existing silicon-based transistors. The ballistic transport of electrons in the CNTFET channel leads to ultra-low-power and high-frequency devices. Although a lot of digital applications of CNTTFET were presented, less work was done in analog applications of CNTFETs. This paper presents analog applications of CNTFET and its implementation of voltage diff erencing transconductance amplifi er (VDTA). The CNTFET VDTA based fi lters and oscillators were proposed. The VDTA circuits are resistorless and can be tuned electronically only by changing transconductance. The proposed CNTFET VDTA shows power consumption of 4000 times less than compared to silicon CMOS technology and a signifi cant reduction in chip area. All simulations were performed using SPICE and MATLAB simulation tools.

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“…Among these solutions, CNTFET is considered as a promising alternative for future extension of Moore's law due to its efficient electrostatic control, ballistic transport of charge carriers, large thermal conductivity, lesser parasitics, higher cutoff frequency, large drive current and low power dissipation to name a few [26][27][28]. Since introduction of CNTFET as an emerging device and better alternative of bulk semiconductor technology, limited work on CNTFET based circuit design has been carried out in analog filtering domain [10,18,26,27,29,30]. This work aims to realize new APF topologies with compact circuit structures for low voltage, low power and high frequency fully differential applications.…”

Section: Introductionmentioning

confidence: 99%

CNTFET Based Fully Differential First Order All Pass Filter

Masud¹,

Khan²

2023

Computer Systems Science and Engineering

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A novel, carbon nanotube field effect transistor (CNTFET) based fully differential first order all pass filter (FDFAPF) circuit configuration is presented. The FDFAPF uses CNTFET based negative transconductors (NTs) and positive transconductors (PTs) in its realization. The proposed circuit topology employs two PTs, two NTs, two resistors and one capacitor. All the passive components of the realized topology are grounded. Active only fully differential first order all pass filter (AO-FDFAPF) topology is also derived from the proposed FDFAPF. The electronic tunability of the AO-FDFAPF is obtained by controlling the employed CNTFET based varactor. A tunabilty of pole frequency in the range of 10.5 to 26 GHz is obtained. Both the circuits are potential candidates for high frequency fully differential analog signal processing applications. As compared to prior state-of-the-art works, both the realized topologies have achieved highest pole frequency and lowest power dissipation. Moreover, they utilize compact circuit structures and suitable for low voltage applications. Moreover, both topologies work equally well in the deep submicron. The proposed filters are analyzed and verified through HPSPICE simulations by utilizing Stanford CNTFET model at 16 nm technology node. It is observed that the proposed circuit simulation outcomes verify the theory.

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A CNTFET universal mixed‐mode biquad active filter in subthreshold region

Cited by 14 publications

References 26 publications

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

CNTFET‐based active grounded inductor using positive and negative current conveyors and applications

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Eff ect Transistor Technology

CNTFET Based Fully Differential First Order All Pass Filter

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