Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection

Wang, Yang; Jin, Xiangliang; Liu, Yang; Jiang, Qi; Yuan, Huihui

doi:10.1016/j.microrel.2014.12.006

Cited by 23 publications

(8 citation statements)

References 9 publications

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“…The deep snapback phenomenon of DDSCR will also cause some problems with high trigger voltage and low holding voltage. [4][5][6][7] A novel dual-polarity device were proposed by Salcedo et al The device meets various ESD protection requirements. The trigger voltage can be adjusted by breakdown junction of DDSCR.…”

Section: Introductionmentioning

confidence: 99%

New DDSCR structure with high holding voltage for robust ESD applications*

Zhou¹,

Jin²,

Wang³

et al. 2021

Chinese Phys. B

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A novel dual direction silicon-controlled rectifier (DDSCR) with an additional P-type doping and gate (APGDDSCR) is proposed and demonstrated. Compared with the conventional low-voltage trigger DDSCR (LVTDDSCR) that has positive and negative holding voltages of 13.371 V and 14.038 V, respectively, the new DDSCR has high positive and negative holding voltages of 18.781 V and 18.912 V in a single finger device, respectively, and it exhibits suitable enough positive and negative holding voltages of 14.60 V and 14.319 V in a four-finger device for ±12-V application. The failure current of APGDDSCR is almost the same as that of LVT-DDSCR in the single finger device, and the four-finger APGDDSCR can achieve positive and negative human-body model (HBM) protection capabilities of 22.281 kV and 23.45 kV, respectively, under 40-V voltage of core circuit failure, benefitting from the additional structure. The new structure can generate a snapback voltage on gate A to increase the current gain of the parasitic PNP in holding voltage. Thus, a sufficiently high holding voltage increased by the structure can ensure that a multi-finger device can also reach a sufficient holding voltage, it is equivalent to solving the non-uniform triggering problem of multi-finger device. The operating mechanism and the gate voltage are both discussed and verified in two-dimensional (2D) simulation and experiemnt.

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Section: Introductionmentioning

confidence: 99%

New DDSCR structure with high holding voltage for robust ESD applications*

Zhou¹,

Jin²,

Wang³

et al. 2021

Chinese Phys. B

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“…The current release capability of the device reaches 87 mA/μm, which enables better on-chip integration. The above device structure provides design ideas for ESD protection of high-voltage communication chips [6]. Xi et al used a 30V complementary diffused metal-oxide semiconductor (CDMOS) process to fabricate a new type of SCR.…”

Section: Introductionmentioning

confidence: 99%

Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection

et al. 2020

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“…Efforts have been dedicated to achieve latch‐up immunity by improving the holding voltage of LDMOS‐SCR [3, 4]. One of the commonly used solutions is to increase the distance between the anode and the cathode [3], but this method does not improve the holding voltage of LDMOS‐SCR sufficiently.…”

Section: Introductionmentioning

confidence: 99%

“…Efforts have been dedicated to achieve latch-up immunity by improving the holding voltage of LDMOS-SCR [3,4]. One of the commonly used solutions is to increase the distance between the anode and the cathode [3], but this method does not improve the holding voltage of LDMOS-SCR sufficiently. To elevate the holding voltage of LDMOS-SCR to be high enough, stacking LDMOS-SCR structure with ring-resistance-triggering technology has been implemented in [4].…”

mentioning

confidence: 99%

Improved LDMOS‐SCR for high‐voltage electrostatic discharge (ESD) protection applications

Song

Hou

et al. 2020

Electron. lett.

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An improved lateral double-diffused MOS silicon-controlled rectifier (ILDMOS-SCR) for high-voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0.18 µm 5 V/24 V BCD process. The proposed improved lateral double-diffused MOS silicon-controlled rectifier (LDMOS-SCR) is constructed by adding a gated P-type/intrinsic/N-type (PIN) diode into a conventional LDMOS-SCR. With part of the ESD current discharges from the surface gated PIN diode path, the proposed ILDMOS-SCR achieves a high holding voltage of 30 V as well as a high failure current of 10.04 A, which is evaluated to pass 15 KV Human Body Model (HBM) ESD stress.

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Robust dual-direction SCR with low trigger voltage, tunable holding voltage for high-voltage ESD protection

Cited by 23 publications

References 9 publications

New DDSCR structure with high holding voltage for robust ESD applications*

New DDSCR structure with high holding voltage for robust ESD applications*

Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection

Improved LDMOS‐SCR for high‐voltage electrostatic discharge (ESD) protection applications

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