Robust ferromagnetism carried by antiferromagnetic domain walls

Hirose, Hishiro T.; Yamaura, Jun‐ichi; Hiroi, Zenji

doi:10.1038/srep42440

Cited by 24 publications

(27 citation statements)

References 29 publications

(43 reference statements)

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“…Detailed semimetallic electronic structures reflecting the all-in-all-out spin ordering have been spectroscopically investigated [59,60,72,73], and unique magnetotransport due to its domain-wall or surface state, as explained later, have been also observed [55,57]. The same all-in-all-out spin ordering has been confirmed for other 5d pyrochlore Cd 2 Os 2 O 7 [64][65][66]68], and similar magnetotransport ascribed to the domain-wall conduction in bulk samples has been also reported [67].…”

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confidence: 54%

Topological properties and functionalities in oxide thin films and interfaces

Uchida

Kawasaki

2018

J. Phys. D: Appl. Phys.

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As symbolized by the Nobel Prize in Physics 2016, "topology" has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of study for the oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials with sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties. two-dimensional chiral p-wave superconductivity, a topological superconducting state equivalent to the Pfaffian state, the Majorana zero modes are expected to localize in vortex cores. Their non-abelian braiding has also attracted recent interest due to its possible application to the topological quantum computation. 2-2. Properties and functionalities of topological spin structuresA striking example of the topologically non-trivial spin structure is magnetic skyrmion [21]. In a typical structure called Bloch-type skyrmion, spins in two dimensions gradually rotate towards the center in perpendicular to the radius directions, as illustrated in Fig. 1(b) [22,23]. The topological invariant concerned is integer skyrmion number (0, ±1, ±2, ...), defined as integral of solid angle subtended by constituent spins in real space. The single skyrmion behaves as a topologically protected spin object, thus attracting rising attention as a robust information carrier in solids. Here, for stabilizing canting of neighboring spins, asymmetric Dzyaloshinskii-Moriya (DM) interaction derived from the spin-orbit coupling is a key parameter. The skyrmion and its lattice structure have been directly observed in chiral metals such as B20type transition-metal silicides and germanides [22,24] and a chiral insulator [25] by some special transmission electron microscopy techniques.Recent studies show promise for the application of the skyrmion to non-volatile magnetic memory, which has the advantages of low driving current and high memory density over the magnetic bubble and racetrack memory devices [26,27]. The non-coplanar spin alignment in the skyrmion produces emergent magnetic field to conduction electrons, resulting in giant Hall effect that is already applied for detecting the skyrmions [28][29][30][31][32][33]. Lately, in addition to the Bloch-type skyrmion, more variety of topological spin structures have been discovered such as Néel-type skyrmion [34,35] and anti-skyrmion [36,37]. More effort will focus on engineering skyrmionic materials in order to realize stable manipulation of skyrmions above room temperature. 3-1. Topological electronic states in oxide filmsCompared to selenides and tellurides forming a group of topological insulator materials, reports of threedimensional topological insulator in oxides have been limited to theo...

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confidence: 54%

Topological properties and functionalities in oxide thin films and interfaces

Uchida

Kawasaki

2018

J. Phys. D: Appl. Phys.

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“…We further note that the assumption of a single τ and n in Eq. 3 breaks down in a ferromagnet 18 , which leads to an additional mechanism for inducing antisymmetric linear MR 4,6,9 . Microscopically, electrons of spin parallel (up) and antiparallel (down) to M have different scattering times τ up and τ dn , with the carrier densities n up and n dn tuned linearly by the applied field through a Zeeman energy shift at the Fermi surface 18 .…”

Section: Resultsmentioning

confidence: 99%

“…In addition, we leverage the presence of parasitic ferromagnetism at metallic domain walls in insulating antiferromagnets 20,21 , where the large coercivity stems from the ferromagnetic moments being pinned strongly by the antiferromagnetic bulk below the Néel temperature, T N . These conditions are met by pyrochlore-structured all-in-all-out (AIAO) antiferromagnets 5,6,22,23 Supplementary Fig. 2), which can preserve constant ferromagnetic domain walls over a field range of at least ±14 T.…”

Section: Experimental Verification and Separation Of Two Mechanismsmentioning

confidence: 99%

“…Here we go beyond this paradigm and study the phenomenon of antisymmetric MR, an effect that is deeply entwined with ferromagnetism and demonstrated by early examples in Ni-Fe alloys with natural coercivity of a few Oe 3,4 . The intrinsic magnetization of a ferromagnet permits unusual and rarely observed manifestations of Onsager's theorem when time reversal symmetry is broken at zero applied field [3][4][5][6] .…”

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Antisymmetric linear magnetoresistance and the planar Hall effect

et al. 2020

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The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρ xy (H z) channel, and should be understood as a part of the general galvanomagnetic behavior.

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“…(T ,0) −Q b (0, 0, -b, -a) (-P ,P ) P b21m (0,0,0,-σ) (0,L,0,0) (0,-X) 13 (-T ,0) Q b (0, 0, a, -b) (-P ,P ) P b21m (0,0,σ,0) (L,0,0,0) (X,0) 14…”

Section: Appendix G: Phase Control With Chemical Substitutionmentioning

confidence: 99%

Coupled structural distortions, domains, and control of phase competition in polar SmBaMn2O6

Nowadnick

Fennie

2019

Phys. Rev. B

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Materials with coupled or competing order parameters display highly tunable ground states, where subtle perturbations reveal distinct electronic and magnetic phases. These phases generally are underpinned by complex crystal structures, but the role of structural complexity in these phases often is unclear. We use group theoretic methods and first-principles calculations to analyze a set of coupled structural distortions that underlie the polar charge-and orbitally-ordered antiferromagnetic ground state of A-site ordered SmBaMn2O6. We show that these distortions play a key role in establishing the ground state and stabilizing a network of domain wall vortices. Furthermore, we show that the crystal structure provides a knob to control competing electronic and magnetic phases at structural domain walls and in epitaxially strained thin films. These results provide new understanding of the complex physics realized across multiple length scales in SmBaMn2O6 and demonstrate a framework for systematic exploration of correlated and structurally complex materials. arXiv:1910.10135v1 [cond-mat.str-el]

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Robust ferromagnetism carried by antiferromagnetic domain walls

Cited by 24 publications

References 29 publications

Topological properties and functionalities in oxide thin films and interfaces

Topological properties and functionalities in oxide thin films and interfaces

Antisymmetric linear magnetoresistance and the planar Hall effect

Coupled structural distortions, domains, and control of phase competition in polar SmBaMn2O6

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