Robust giant magnetoresistance sensors

Lenssen, K.-M.H.; Adelerhof, Derk Jan; Gassen, H.J.; Kuiper, A. E. T.; Somers, G.H.J.; Zoń, Jerzy

doi:10.1016/s0924-4247(00)00342-3

Cited by 95 publications

(37 citation statements)

References 28 publications

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“…Magnetic sensors based on the magnetoresistance of a material have been investigated intensively for quite a while [21,22]. In addition, magnetoresistant materials are of great interest in the field of spintronics, see Ref.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of Mn-decorated topological line defects in graphene

2015

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We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

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Section: Introductionmentioning

confidence: 99%

Magnetoresistance of Mn-decorated topological line defects in graphene

2015

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“…The multilayers of copper and cobalt/nickel find application in high-density magnetic storage media, GMR sensors, hard coatings [1][2][3][4], etc. Physical evaporation techniques viz sputtering, molecular beam epitaxy (MBE), electron beam evaporation and pulse laser ablation [5][6][7][8][9][10][11] have been extensively used to grow multilayers of these elements.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Cu and Co multilayer deposition in aqueous ambient

Gupta

Nayak

Kaushik

et al. 2005

Journal of Physics and Chemistry of Solids

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“…Antiferromagnetic layers are an important component of hard disk read heads and of non-volatile magnetic random access memory elements, MRAM. The effect of exchange bias at the interface between an antiferromagnetic (AFM) and a ferromagnetic (FM) layer expresses itself as a unidirectional pinning or anisotropy of the magnetization of the ferromagnet, and is utilized to fix the magnetization in a magnetic reference layer in a spin-valve structure or a magnetic tunnel junction (MTJ), which consists of two ferromagnetic layers separated by a non-magnetic metal (spin-valve) or an insulator (MTJ) [4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%