Robust porous MSQ (k=2.3, e=12 GPa) for low-temperature (&amp;gt;350°C) Cu/low-k integration using ArF resist mask process

Ohashi, N.; Misawa, K.; Sone, S.; Shin, Hamin; Inukai, K.; Soda, E.; Kondo, Shinya; Furuya, Akira; Okamura, Hitoshi; Ogawa, Shinya; Kobayashi, N.

doi:10.1109/iedm.2003.1269414

Cited by 3 publications

(3 citation statements)

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“…For example, the application of H 2 /He or N 2 /H 2 instead of O 2 plasma can suppress damage formation during the ash process. 10,11) As an alternative approach to this challenge, the repair processes of plasma-induced damage on the surface of the porous SiOCH film as well as the internal pore walls with remethylating compound have been attracting much attention. Many approaches such as silylation [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] and UV-assisted restoration 27,28) have been studied to restore the k-value of the damaged porous SiOCH film.…”

Section: Introductionmentioning

confidence: 99%

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

Kimura¹,

Ishikawa²,

Nakano³

et al. 2012

Jpn. J. Appl. Phys.

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We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.0 and 2.3, the recovery of the k-value was observed on the k = 2.3 film in proportion to –OH group reduction. However, the k = 2.0 film did not show recovery in spite of –OH group reduction. We found that hydrocarbon content in the k = 2.0 film was significantly increased by the UV-assisted restoration compared with the k = 2.3 film. According to these findings, we optimized the UV-assisted restoration to achieve improved controllability of the hydrocarbon uptake in the k = 2.0 film and confirmed the recovery of the k-value for O2-plasma-damaged film. Thus, adjusting the hydrocarbon uptake was crucial for restoring extremely porous SiOCH film.

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Section: Introductionmentioning

confidence: 99%

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

Kimura¹,

Ishikawa²,

Nakano³

et al. 2012

Jpn. J. Appl. Phys.

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“…For example, the use of N 2 /H 2 or H 2 /He chemistries instead of O 2 can suppress the ashing-induced damage. 6,7) A promising method for alternative recovery from plasma-induced damage in porous silica low-k films is organosiloxane vapor postannealing. [8][9][10] In this report, the effects of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor annealing on chemical bonds and carbon concentration profiles in porous silica films depending on the process gas chemistry are analyzed.…”

Section: Introductionmentioning

confidence: 99%

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Ono

Kinoshita

Takahashi

et al. 2006

jjap

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It was demonstrated that recovery from dry etching and ashing damage in porous silica low-k films occurred by 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor annealing. The increase in k-value after Ar/C5F8/O2 plasma etching was reduced from 35 to 6.5% of the initial value (k=2.25) by TMCTS vapor annealing. Leakage current also returned to the initial level. Hydrofluoric acid wet etching revealed the sidewall damaged region in a porous silica trench due to plasma processes. The TMCTS vapor annealing was found to be effective for recovery from the sidewall damage. Fourier transformed infrared absorption spectroscopy indicated that the replacement of Si–CH3 bonds in low-k films by Si–O and Si–OH bonds occurred during plasma processes. The recovery mechanism involves hydrophobic bond (–CH3) reintroduction into the film followed by stable cross-linked poly(TMCTS) network formation on pore wall surfaces by TMCTS vapor annealing.

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“…Plasma-induced damage can be reduced using oxygen-free gas chemistry. 1) In addition, a damage recovery method was proposed to restore both the hydrophobicity of the film and leakage current. 2,3) For process optimization, it is important to determine the effect of pore introduction and material composition on etching characteristics, such as etch rate and selectivity.…”

Section: Introductionmentioning

confidence: 99%

Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

Ono¹,

Takahashi²,

Kinoshita³

et al. 2006

Jpn. J. Appl. Phys.

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The reactive ion etch rates of porous silica films with different dielectric constants (k-values) or film densities were measured by varying wafer bias and gas ratio for Ar/C5F8/O2 plasma. Both the etch rates of porous silica films and the optical emission intensities from the etching products (SiF) increased with wafer bias power. Etch rate increased with decreasing k-value of porous silica, whereas SiF emission intensity was maintained constant regardless of k-value, indicating that the amount of etching products escaping from the porous silica surface to the gas phase remained unchanged. From this result it is concluded that mass etch rate, defined as the weight of a porous silica film etched from a unit area per unit time, is constant for Ar/C5F8/O2 plasma.

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Robust porous MSQ (k=2.3, e=12 GPa) for low-temperature (>350°C) Cu/low-k integration using ArF resist mask process

Cited by 3 publications

References 0 publications

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

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