Novel high-temperature (> 150 "C ) ashing using mixture of H2 and He gases (H2Me) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320nm pitch Cdporous-MSQ (k =2.3) interconnects using 300mm wafers showed no degradation in leakage currents and wiring capacitance.It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.

Toward the 45-nm technology node, multilevel C u dual-damascene interconnects with hybrid-structure low-k ILDs consisting of porous MSQ (k<1.6-1.8) and organic polymer films are successfully integrated on 300-mm wafers for the first time with a low-pressure CMP and dummy pattern technology, which supports the poor mechanical properties of ultra low-k films. IntroductionLow-k dielectrics have been extensively investigated as materials that can reduce the parasitic capacitance of ULSI interconnects. Porous low-k materials are thought to he the most promising for 45-65-nm technology nodes. Ultra low-k materials (k

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