Robustness of 1.2kV SiC MOSFET devices

Othman, Dhouha; Lefebvre, Stéphane; Berkani, Mounira; Khatir, Zoubir; Ibrahim, Ali; Bouzourene, A.

doi:10.1016/j.microrel.2013.07.072

Cited by 59 publications

(28 citation statements)

References 12 publications

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“…The decrease of V GS results from the occurrence of a leakage current between gate and source measured during the tests. This particular behavior has already been shown on other SiC MOSFETs in [5] where the increase of this leakage current has been explained by tunneling effect. Maximum gate leakage current is about 100 mA.…”

Section: Experimental Results For Sic Mosfetssupporting

confidence: 77%

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen

Labrousse

Lefebvre

et al. 2015

Microelectronics Reliability

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International audienceThis paper presents experimental robustness tests made on Silicon Carbide (SiC) MOSFETs and SiC Bipolar Junction Transistors (BJTs) submitted to short-circuit operations (SC) or current limitation modes. For SiC MOSFETs, a gate leakage current is detected before failure without being responsible for the immediate failure. Nevertheless this gate leakage current is not without effect on the integrity of the SiC MOSFETs. Based on several robustness tests performed on SiC MOSFETs and on the comparison with experimental results obtained with SiC BJTs, the paper points out two main failure modes for SiC MOSFETs. The first one results in a simultaneously short circuit between drain and gate and drain and source and the second one in a degradation of the insulation between gate and source leading to a short circuit between gate and source. For some tested devices, the failure appears in a very interesting open state mode between drain and source after physical short-circuit between gate and source with a mode of failure very similar to those observed for SiC BJT

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Section: Experimental Results For Sic Mosfetssupporting

confidence: 77%

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Chen

Labrousse

Lefebvre

et al. 2015

Microelectronics Reliability

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“…In [17]- [19], an experimental 57 evaluation of robustness and performances of commercially 58 available devices was given. The reported results showed 59 the weakness of the gate during SC tests and at different 60 failure modes.…”

mentioning

confidence: 99%

A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

Romano

Fayyaz

Riccio

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

214

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A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk I E E E P r o o f IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 1A

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“…The SCWT is 20 μs, which corresponds to 0.89 J of dissipated energy. Failure of this particular power device, indicated by the gate voltage switch from −5 V to 0 V, is recorded around 3.3 μs after a successful turn-off [8]. However, as can be seen in Fig.…”

Section: Energy Limiting Failurementioning

confidence: 85%

“…SiC transistors of the same power rating are reported to endure higher short-circuit times. More specifically, the response of SiC metal oxide semiconductors (MOSFETs) under short-circuit is investigated in [7][8][9][10]. During the current limiting mode, the on-state resistance of a MOSFET increases due to the threshold voltage (v th ) variation and the carrier mobility reduction with temperature [7].…”

Section: Introductionmentioning

confidence: 99%

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Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications

Kampitsis

Papathanassiou

Manias

2015

Microelectronics Reliability

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Robustness of 1.2kV SiC MOSFET devices

Cited by 59 publications

References 12 publications

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications

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