Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption layer on enhancing cell parameters in hydrogenated amorphous silicon germanium solar cells

Pham, Duy Phong; Kim, Sangho; Park, Jinjoo; Cho, Jaehyun; Kim, HyunSung; Le, Anh Huy Tuan; Yi, Junsin

doi:10.1016/j.ijleo.2017.02.074

Cited by 12 publications

(3 citation statements)

References 27 publications

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“…1. where I 2100 and I 2000 denote the integrated area of peaks at 2100 and 2000 cm −1 , respectively. 27,32 A high-quality silicon film is expected to have a low MF value. Hydrogen content was calculated using Eq.…”

Section: Resultsmentioning

confidence: 99%

Initial Nucleation Approach for Large Grain-Size and High-Quality Microcrystalline Silicon Active Layer in Thin Film Transistors

Choi

Cho²,

Kim³

et al. 2023

ECS J. Solid State Sci. Technol.

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High mobility and stability are critical factors for thin film transistor (TFT) device quality. These parameters are directly dependent on the crystalline structure of the active layer materials. In this paper, the early nucleation approach was performed for increasing the crystalline grain size of microcrystalline silicon (μc-Si) active layer for TFT device quality. The crystalline nucleation is delicately regulated in an intense hydrogen plasma environment using the plasma enhanced chemical vapor deposition (PECVD). When compared to μc-Si:H deposition without the nucleation approach, the crystalline volume factor of μc-Si:H increased from 60% to over 80% by using the nucleation technique. The nucleation increases the crystalline grain size by five orders of magnitude. Furthermore, the surface roughness of μc-Si:H is decreased from 13.7 to 7.1 nm. A forming-gas post-annealing treatment (≤ 400°C) is used to minimize defect density. With a low microstructural factor, thermal-treated film quality improves dramatically. Nucleation approach is to be a simple and efficient for producing high-quality TFT devices.

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Section: Resultsmentioning

confidence: 99%

Initial Nucleation Approach for Large Grain-Size and High-Quality Microcrystalline Silicon Active Layer in Thin Film Transistors

Choi

Cho²,

Kim³

et al. 2023

ECS J. Solid State Sci. Technol.

Self Cite

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“…However, it is observed that a discontinuity occurs at p/i interface. It has been reported that for SHJ solar cells, discontinuity at the p/i interface will result in an increase of carrier recombination rate and a reduction of hole collection at the interface [28,29]. The discontinuity becomes more and more obvious when the band gap of a-SiC:H films is higher.…”

Section: Resultsmentioning

confidence: 99%

Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

et al. 2019

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Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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“…D. P. Pham et al . reported that depositing a thin a-Si:H PAL at the p/a-SiGe:H interface can reduce the interface defects and significantly improve device performance 34 .…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector

Sun

Zhang

et al. 2019

Sci Rep

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In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications.

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Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption layer on enhancing cell parameters in hydrogenated amorphous silicon germanium solar cells

Cited by 12 publications

References 27 publications

Initial Nucleation Approach for Large Grain-Size and High-Quality Microcrystalline Silicon Active Layer in Thin Film Transistors

Initial Nucleation Approach for Large Grain-Size and High-Quality Microcrystalline Silicon Active Layer in Thin Film Transistors

Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector

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