Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Malik, Amit; Sharma, C. P.; Laishram, Radhapiyari; Bag, Rajesh K.; Rawal, D. S.; Vinayak, Seema; Sharma, R. K.

doi:10.1016/j.sse.2018.01.002

Cited by 36 publications

(13 citation statements)

References 13 publications

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“…The observed shift in V Th was caused by the redistribution of traps at the AlGaN/GaN interface. 24,25 Furthermore, the gate leakage current (I G ) marginally decreased (Fig. 5c).…”

Section: Resultsmentioning

confidence: 92%

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Sharma

Singh

Chao

et al. 2020

Journal of Elec Materi

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This study examined the effects of three cumulative c-ray irradiation doses on AlGaN/GaN epilayer material and on high electron mobility transistor (HEMT) devices. After a cumulative c-ray dose of 16 kGy, the Hall mobility increased from 1800 cm 2 /V s to 2100 cm 2 /V s, as determined through Hall measurement. Atomic force microscopy indicated an improvement in surface roughness but no change in the surface potential ; s ð Þ. The HEMT device exhibited improvement in the drain current, with a subtle decreasing tendency in the leakage current. At high doses of c-ray irradiation, the trends in the material and device parameters saturated. Moreover, the metal-semiconductor interface degraded, as confirmed through scanning electron microscopy image analysis.

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“…The observed shift in V Th was caused by the redistribution of traps at the AlGaN/GaN interface. 24,25 Furthermore, the gate leakage current (I G ) marginally decreased (Fig. 5c).…”

Section: Resultsmentioning

confidence: 92%

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Sharma

Singh

Chao

et al. 2020

Journal of Elec Materi

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“…In addition to the influence on the Schottky contact described above, there may have also been an influence on the AlGaN/GaN interface layer. It has been proved that in the process of reverse gate bias, the AlGaN/GaN interface trap captures electrons in the channel and causes the negative shift of threshold voltage [9]. At high temperature, the interface structure of AlGaN/GaN is unstable, which is easy to generate more interface traps.…”

Section: Off-state Stress At High Temperaturementioning

confidence: 99%

“…The thermionic electron will lead to the capture and generation of surface state traps between the gate and drain, thus affecting the performance of devices and causing device degradation. Some studies believe that the inherent traps [4,5] will capture the thermal electrons, while others believe that the thermal electrons themselves will form new defects [6][7][8][9]. Actually, the thermionic electron effect could not be used to explain all of the high-field degradation phenomena.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, it is necessary to study the reliability of devices during high-temperature operation. In past research on device reliability, the experiments of temperature change characteristics [15][16][17][18][19] and high-field stress [4][5][6][7][8][9][10][11][12] were separately performed, which is different from the current situation where the device is operated in a high-temperature environment. Therefore, this paper studied the electrothermal coupling degradation characteristics of AlGaN/GaN HEMT devices.…”

Section: Introductionmentioning

confidence: 99%

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Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

et al. 2019

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GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the same time in actual operation. In this work, the impact of separate off-state stresses, separate high-temperature stresses, and off-state stresses at high temperatures on AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was investigated. The output current and gate leakage of the device degenerated to different degrees under either isolated off-state or high-temperature stress. The threshold voltage of the device only exhibited obvious negative drift under the action of high-temperature and off-state stresses. The parameter at high temperature (or room temperature) before stress application was the reference. We found that there was no significant difference in the degradation rate of drain current and transconductance peak when the same off-state stress was applied to the device at different temperatures. It was concluded that, under the high-temperature off-state electric field pressure, there were two degradation mechanisms: one was the inverse piezoelectric polarization mechanism only related to the electric field, and the other was the degradation mechanism of the simultaneous action of temperature and electric field.

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“…based AlGaN/GaN HEMTs on conventional substrates [107]. This could be due to the absence of the trap rich transition layer (AlN/GaN superlattice structure) as compared to the conventional GaN/Si HEMT structure [107].…”

Section: G-f Characteristics and Trap Density Estimationmentioning

confidence: 99%

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond

Ranjan¹

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Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Cited by 36 publications

References 13 publications

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond

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