Role of Cu−Benzotriazole Nanoparticles in Passivation Film Formation

Li, Yan; Gong, Maogang; Ramji, Karpagavalli; Li, Yuzhuo

doi:10.1021/jp904782t

Cited by 36 publications

(22 citation statements)

References 50 publications

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“…However, the resolution limit of the TEM used is in the one nanometre range. When dealing with subnanometre-size clusters, the structure and the size of the individual cluster cannot be determined accurately as they tend to aggregate, 8 which makes it harder to detect the individual clusters. This was also observed for the Cu:BTA clusters.…”

Section: Resultsmentioning

confidence: 99%

One-pot synthesis and characterization of subnanometre-size benzotriazolate protected copper clusters

et al. 2012

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A simple one-pot method for the preparation of subnanometre-size benzotriazolate (BTA) protected copper clusters, Cu(n)BTA(m), is reported. The clusters were analyzed by optical and infrared spectroscopy, mass spectrometry and transmission electron microscopy together with computational methods. We suggest a structural motif where the copper core of the Cu(n)BTA(m) clusters is protected by BTA-Cu(i)-BTA units.

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Section: Resultsmentioning

confidence: 99%

One-pot synthesis and characterization of subnanometre-size benzotriazolate protected copper clusters

et al. 2012

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“…The most widely used inhibitor in metal CMP slurries as well as in other applications is BTA [34][35][36][37][38][39][40][41][42][43]. The effect of BTA on the polishing performance of AISI 52100 steel is shown in Fig.…”

Section: Effect Of Bta On the Polishing Performance Of Aisi 52100 Steelmentioning

confidence: 99%

“…According to the Langmuir adsorption isotherm, BTA can be both physically and chemically adsorbed on the iron surface in acid solutions [43]. Specifically, at pH 4.00, BTA exists as a form of BTAH without protonation [37]. The chemical adsorption can occur between the -electrons of the BTAH molecules and the vacant d-orbital of the iron atoms (either divalent or trivalent) on the surface, and the nitrogen atoms of the triazole ring of BTA can directly react with the iron atoms to generate complex polymers as a form of [Fe n (BTA) p ] m [42].…”

Section: Solutionmentioning

confidence: 99%

Chemical mechanical polishing of steel substrate using colloidal silica-based slurries

Jiang

Luo

2015

Applied Surface Science

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“…23 In contrast, in the presence of the passivating agents, the diffusion of Cu ions into the aqueous phase is restricted due to the formation of a dense hydrophobic or passivation film on the surface. 24 From the experimental results by polishing Cu on the reference pad, we can understand that the BTA arrival to the Cu surface occurs in parallel with the arrival of glycine and H 2 O 2 . To further strengthen this understanding, one can also argue that the BTA arrival is faster than glycine, hence yielding a low copper RR even at a less concentration of BTA.…”

Section: Resultsmentioning

confidence: 92%

1H-Benzotriazole Incorporated Pad for Chemical Mechanical Planarization of Copper

Jia

Venkataraman

et al. 2010

J. Electrochem. Soc.

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Chemical mechanical polishing ͑CMP͒ pads are generally designed to play a passive role in terms of chemical reactions that occur on the surface to be polished. For copper CMP, a pad that is capable of initiating and controlling various chemical reactions on the copper surface can bring another dimension of flexibility to the CMP process. This work investigates such a model pad for its potential applications in copper CMP. More specifically, the physical and chemical properties of a polyurethane pad containing 1H-benzotriazole ͑BTA͒ are examined. When applied to Cu blanket wafers, the BTA-containing pad yielded a higher removal rate compared to the conventional CMP process with the reference pad. For patterned wafer polishing, the results indicate that the BTA-containing pad is effective in improving the step height reduction efficiency and in minimizing dishing and erosion. The potential applications of a pad with such a design for gaining a fundamental understanding of the copper CMP process are discussed based on these experimental results.Chemical mechanical polishing ͑CMP͒ has become a main stream method in submicrometer integrated circuit manufacturing for its global and local planarization abilities, thereby more efficiently enabling the fabrication of multilevel interconnects. 1,2 The key consumables in a CMP process include pad, slurry, conditioner, and carrier. 3 During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, the polishing pad plays a critical role in the CMP process and influences the outcomes such as removal rate ͑RR͒, step height reduction efficiency ͑SHRE͒, withinwafer nonuniformity ͑WIWNU͒, wafer-to-wafer nonuniformity, and defect counts. 4 The conventional Cu CMP slurry is comprised of an oxidizer, abrasive particles, passivating agent, and chelating agent. 5,6 Optional additives can be anions, surfactants, and rheological modifiers. The oxidizer commonly used is hydrogen peroxide ͑H 2 O 2 ͒ to generate copper ions from the surface. Among metal oxides, colloidal silica ͑SiO 2 ͒ has become the choice of abrasive particles in copper CMP due to its availability in various sizes, purity, and functionality. The passivating agent is often chosen from one of the azole derivatives such as benzotriazole ͑BTA͒, imidazole, or any organic compounds that can form an insoluble film on the Cu surface. The chelating agent can be any organic acids that can form water-soluble complexes. Examples of possible chelating agents include carboxylic acids and amino acids.The CMP process is well recognized for its power in providing global and local planarizations for wafer processing. 7 However, CMP processes also have disadvantages in terms of introducing defects such as dishing, erosion, scratches, and contamination. 8,9 Dishing and erosion affect the electrical resistance of interconnects because they change the dimension and properties of the cross section of the interconnects. 10 With the conven...

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Role of Cu−Benzotriazole Nanoparticles in Passivation Film Formation

Cited by 36 publications

References 50 publications

One-pot synthesis and characterization of subnanometre-size benzotriazolate protected copper clusters

One-pot synthesis and characterization of subnanometre-size benzotriazolate protected copper clusters

Chemical mechanical polishing of steel substrate using colloidal silica-based slurries

1H-Benzotriazole Incorporated Pad for Chemical Mechanical Planarization of Copper

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