Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications

Sravani, K. Girija; Narayana, T. Lakshmi; Guha, Koushik; Rao, K. Srinivasa

doi:10.1007/s00542-018-4038-4

Cited by 17 publications

(11 citation statements)

References 13 publications

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“…as derived from (21). Figure 2 displays both u 1 (r) and u 2 (r), a possible recovery of the membrane.…”

Section: An Interesting Results Of the Existence Of At Least One Solutionmentioning

confidence: 99%

“…Therefore, the presence of the fringing field would seem not to invalidate the validity of (21). However, in (21), there is no trace of C el which represents the most influenced electrostatic parameter by the fringing-field effect, so the presence of terms due in the fringing field is not explicitly evident. On the other hand, studying the existence of the solution for (2), made (21) provide an algebraic condition in which the fringing field (presence of δ) was evident.…”

Section: Maximal Value Of V So the Membrane Does Not Touch The Upper Diskmentioning

confidence: 99%

“…Furthermore, if the solution is not analytically obtainable, one can rely on numerical techniques that provide approximate solutions that, if they satisfy the aforementioned conditions of existence and uniqueness [11][12][13], do not represent ghost solutions [14][15][16][17][18]. The scientific community is currently working hard both on the analysis and synthesis of multiphysical models, and on technology transfer [19][20][21][22][23][24]. In such contexts, it is preferred to study MEMS devices equipped with symmetries in order to obtain models that can be studied more easily, both mathematically and physically [12].…”

Section: Introductionmentioning

confidence: 99%

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A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

2021

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An important problem in membrane micro-electric-mechanical-system (MEMS) modeling is the fringing-field phenomenon, of which the main effect consists of force-line deformation of electrostatic field E near the edges of the plates, producing the anomalous deformation of the membrane when external voltage V is applied. In the framework of a 2D circular membrane MEMS, representing the fringing-field effect depending on ?|∇u|2 with the u profile of the membrane, and since strong E produces strong deformation of the membrane, we consider |E| proportional to the mean curvature of the membrane, obtaining a new nonlinear second-order differential model without explicit singularities. In this paper, the main purpose was the analytical study of this model, obtaining an algebraic condition ensuring the existence of at least one solution for it that depends on both the electromechanical properties of the material constituting the membrane and the positive parameter δ that weighs the terms ?|∇u|2. However, even if the the study of the model did not ensure the uniqueness of the solution, it made it possible to achieve the goal of finding a stable equilibrium position. Moreover, a range of admissible values of V were obtained in order, on the one hand, to win the mechanical inertia of the membrane and, on the other hand, to ensure that the membrane did not touch the upper disk of the device. Lastly, some optimal control conditions based on the variation of potential energy are presented and discussed.

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“…as derived from (21). Figure 2 displays both u 1 (r) and u 2 (r), a possible recovery of the membrane.…”

Section: An Interesting Results Of the Existence Of At Least One Solutionmentioning

confidence: 99%

Section: Maximal Value Of V So the Membrane Does Not Touch The Upper Diskmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

2021

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“…The spring constant of the suggested unique shaped spring of the radio frequency MEMS switch depends on the number of rectangular segments into which it has been divided. 10 Hence, the calculated value of the spring constant of each of the 12 rectangular segments shown in Figure 8 will give the total spring constant of the suggested model. Each rectangular segment has a spring constant which is given by 10…”

Section: Spring Constant and Resonant Frequencymentioning

confidence: 99%

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Narzary

Kumar

Bhattacharjee

et al. 2020

Trans Emerging Tel Tech

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An innovative capacitive radio frequency MEMS shunt switch with a unique shaped spring is designed and analyzed using COMSOL Multiphysics 5.4. The proposed switch using Hafnium oxide (HfO 2) and Niobium pentoxide (Nb 2 O 5) as the dielectric material between the transmission line and the deflecting gold membrane provides certain advantageous benefits with respect to performance parameters such as low actuation voltage, less spring constant, good isolation, low insertion loss, small size, and high capacitance ratio compared to other designs. A combination of three-turn meander and C-shaped spring having a spring constant of 0.186 N/m helps in achieving convenient actuation voltage. For 1, 1.5, and 2 μm air gaps, the actuation voltages required to bring the switch to ON mode are 1.77, 3.24, and 4.96 V respectively with Nb 2 O 5 as the dielectric layer and 1.8, 3.28, and 5.01 V respectively with HfO 2 as the dielectric layer respectively. At 2-μm air gap, the capacitance ratio is 329 for Nb 2 O 5 and 113 for HfO 2. RF analysis using ANSYS HFSS software shows the isolation of −19.41 dB at 11 GHz and insertion loss as low as −0.27 dB at 15 GHz. The proposed switch operating within the range of 1 to 30 GHz gives optimum results compared to other devices and is suitable for wireless communication and satellite payload applications.

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“…Electrostatic actuation has been utilized to change the mode of operation of the switch i.e., from ON to OFF state. MEMS shunt switch utilizes a DC voltage to be actuate it, and the voltage which is allowed to contact perfectly the dielectric layer and the beam is known as pull-in-voltage and it is given as [11].…”

Section: B Actuation Voltagementioning

confidence: 99%

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

et al. 2019

Self Cite

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This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The proposed switch structure is optimized, designed, and simulated with FEM analysis such as electromechanical and electromagnetic by using COMSOL and HFSS tools respectively. The best performance of the switch is observed by varying different parameters such as beam material, beam thickness, dielectric thickness, and airgap. The proposed switch with different meandering techniques attains the pull-in voltage in the range of 10.3-46 V, particularly the three uniform meander technique has low actuation voltage of 10.3 V. The RF performance of the device is particularly tuned in the range of 26.5-40 GHz frequency range and it is analyzed for all types of meanders. Among them, the non-uniform single meander has attained the best isolation of −54.13 dB at 40 GHz in the off state. The insertion and return losses of the device are −0.514 dB and −17.35 dB over 1-40 GHz frequency in on state.

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Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications

Cited by 17 publications

References 13 publications

A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

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Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications

Cited by 17 publications

References 13 publications

A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control

Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb2O5 and HfO2 dielectric for satellite payload applications

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

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Design and analysis of enhanced capacitive radio frequency MEMS switch based on Nb₂O₅ and HfO₂ dielectric for satellite payload applications