Role of Etching in Aqueous Oxidation of Hydrogen-Terminated Si(100)

Kulkarni, Margaret; Green, Sara K.; Shea, Caitlyn; Queeney, K. T.

doi:10.1021/jp8114989

Cited by 8 publications

(5 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As is evident in Figure A, the initially sharp ν(SiH x ) bands broaden considerably after reaction with the carbenes, which renders integration of this peak, and therefore the calculated Si–H conversion, sensitive to small variations in the baseline; these values should therefore be considered as rough estimates. Additionally, some surface oxidation was observed for both 6 · Si(111) and 7 · Si(111) , which likely accounts for some of the decrease in surface SiH x species by replacement with surface SiOH or (SiO) 3 SiH species . The extent of surface oxidation, estimated by integration of the Si–O stretching bands in the two samples of each reaction type at ∼1000–1150 cm –1 (see the Supporting Information) and comparison with the intensity of the SiO 2 phonon signal from a chemical oxide, ranged from 28% to 33% of a full oxide layer after reaction with 7 and from 5% to 24% of a full layer after reaction with 6 .…”

Section: Si Wafer Studiessupporting

confidence: 81%

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces

et al. 2016

Self Cite

View full text Add to dashboard Cite

Surface passivation has enabled the development of silicon-based solar cells and microelectronics. However, a number of emerging applications require a paradigm shift from passivation to functionalization, wherein surface functionality is installed proximal to the silicon surface. To address this need, we report here the use of persistent aminocarbenes to functionalize hydrogen-terminated silicon surfaces via Si-H insertion reactions. Through the use of model compounds (H-Si(TMS)3 and H-Si(OTMS)3), nanoparticles (H-SiNPs), and planar Si(111) wafers (H-Si(111)), we demonstrate that among different classes of persistent carbenes, the more electrophilic and nucleophilic ones, in particular, a cyclic (alkyl)(amino)carbene (CAAC) and an acyclic diaminocarbene (ADAC), are able to undergo insertion into Si-H bonds at the silicon surface, forming persistent C-Si linkages and simultaneously installing amine or aminal functionality in proximity to the surface. The CAAC (6) is particularly notable for its clean insertion reactivity under mild conditions that produces monolayers with 21 ± 3% coverage of Si(111) atop sites, commensurate with the expected maximum of ∼20%. Atomic force and transmission electron microscopy, nuclear magnetic resonance, X-ray photoelectron, and infrared spectroscopy, and time-of-flight secondary ion mass spectrometry provided evidence for the surface Si-H insertion process. Furthermore, computational studies shed light on the reaction energetics and indicated that CAAC 6 should be particularly effective at binding to silicon dihydride, trihydride, and coupled monohyride motifs, as well as oxidized surface sites. Our results pave the way for the further development of persistent carbenes as universal ligands for silicon and potentially other nonmetallic substrates.

show abstract

Section: Si Wafer Studiessupporting

confidence: 81%

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…It has previously been reported [44][45][46][47] that vertically etching is mainly dependent on the type of silicon original crystallographic orientation, metal nanoparticles agglomeration on the surface of wafer and the competition among the etching rates in different silicon wafer planes. The top-view of the SEM image (Fig.…”

Section: Resultsmentioning

confidence: 99%

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

Sun

Liu

et al. 2011

CrystEngComm

View full text Add to dashboard Cite

In this paper, two types of hybrid semiconductors made up of silicon nanowires and ZnO nanostructures, namely Si/ZnO core-shell nanowire arrays and ZnO quantum dots (QDs)-decorated Si nanowire arrays, have been prepared by combining metal-assisted wet-chemical etching and metalorganic chemical vapor deposition (MOCVD). We demonstrate that ZnO QDs and thin ZnO layers can be grown on Si nanowires in a controlled manner by varying growth parameters including working pressure and growth time. Meanwhile, porous silicon and porous Si/ZnO nanowire arrays have also been fabricated. The morphology and optical properties of both hybrid nanostructures have been carefully investigated for their potential applications in nanowire optoelectronics. A quantum confinement effect in ZnO QDs was confirmed by the blue-shifted photoluminescence. Porous Si/ZnO core-shell nanowires display a very broad emission band throughout the entire visible light range.

show abstract

“…90 At the same time, a recent study by Kulkarni et al shows that exposure of H-terminated silicon surface to aqueous oxygen at room temperature produces patches of surface oxide with a large amount of hydrogen still exposed. 91 Isotopic labeling indicated that etching plays a substantial role in surface oxidation.…”

Section: Chemical Reactivity and Selectivity Of The Modified Silicon ...mentioning

confidence: 99%

Reactivity of selectively terminated single crystal silicon surfaces

Perrine

Teplyakov

2010

Chem. Soc. Rev.

View full text Add to dashboard Cite

As the cornerstone of multiple practical applications, silicon single crystal surfaces have attracted the interest of scientific and engineering communities for several decades. The most recent advances employ the surfaces precovered with a specific functionality to extend into the realm of organic and metal-organic films with well-defined interfaces, to protect the surfaces from oxidation and other contaminations, and to build the components of present and future molecular electronics and sensing devices. This critical review will focus on the reactivity of the selectively terminated Si(100) and Si(111) surfaces. The hydrogen and halogen-terminated surfaces are the most widely used and most heavily reviewed previously, thus only a brief summary will be given here with the emphasis of the most recent thermal approaches to functionalization of hydrogen-terminated silicon. The silicon surfaces precovered with NH(x) functionality are emerging as a very likely candidate both for the production of sharp interfaces and for coadsorption, co-assembly, and potential molecular templating of patterns on single crystalline surfaces. A brief overview of recent advances in achieving control over the hydroxyl-termination of silicon will be given. Some future directions for further development of chemistry, reactivity, and assembly on these surfaces, as well as potential applications, are highlighted in the last section (152 references).

show abstract

Role of Etching in Aqueous Oxidation of Hydrogen-Terminated Si(100)

Cited by 8 publications

References 38 publications

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

Reactivity of selectively terminated single crystal silicon surfaces

Contact Info

Product

Resources

About