Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

Feng, Lin; Chang, Chun‐Yen; Chang, Ting‐Chang; Tu, Chun‐Hao; Wang, Pai-Syuan; Chang, Yao‐Feng; Chen, Min-Chen; Huang, Hui‐Chun

doi:10.1063/1.3279131

Cited by 20 publications

(11 citation statements)

References 22 publications

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“…However, when the voltage sweep reached ±40 V, the memory window slightly decreased due to the polarization effect from the SWCNTs stack. A similar increase in the memory window, with an increasing voltage sweep, was reported by several groups [27,28].…”

Section: Resultssupporting

confidence: 86%

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

et al. 2016

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Abstract:The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance-voltage (C-V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.

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Section: Resultssupporting

confidence: 86%

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

et al. 2016

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“…[http://dx.doi.org/10.1063/1.4962655] Nowadays, non-volatile flash memory based products, such as digital cameras, laptops, MP4 players, and mobile phones, have attracted great attention over the last decades. 1,2 According to the prediction from the international technology roadmap for semiconductors (ITRS, 2013), 3 semiconductor manufacturing will enter an age of 5 nm technology in the year 2020. Following the conventional Si technology-based non-volatile flash memory advantages, an electronic device with ultrahigh storage density, low power consumption, and prolong retention time is urgently demanded in the near future.…”

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confidence: 99%

“…Hence, Eq. (2) can be simplified as J ¼ kV 2 . In comparison with that (J ¼ ckV 2 , c ( 1) in a forward sweeping direction (0 !…”

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confidence: 99%

Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

Zhou

Sun

Yao

et al. 2016

Applied Physics Letters

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MoSe2-doped ultralong Se microwires of length/diameter ratio in the order of ∼240 are synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. The ERSM exhibits stable resistance ratio of ∼102 for 5000 s, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage. By investigating the dynamic processes of trap filling, de-trapping, and free-charge migration, trap-controlled space-charge-limited current mechanism is found to dominate the observed ERSM behaviour. © 2016 Author(s)

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“…1 However, flash memory is facing several challenges such as scalability limits, slow write/erase speed, and high power consumption. 2,3 Therefore, researchers have considered new storage materials and novel structures in nonvolatile memory devices to replace the conventional floating gate flash. Leading contenders currently include phase change memory, magnetic random access memory, ferroelectric random access memory, and resistive random access memory (RRAM).…”

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confidence: 99%