2015
DOI: 10.1063/1.4909533
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Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

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Cited by 46 publications
(40 citation statements)
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“…less electrical and thermal stress). 26 The typical current-sweep I-V curves of Al/HfO x /Al and TaN/HfO x /Al devices are shown in Fig. 4.…”
Section: (C) and (D))mentioning
confidence: 99%
“…less electrical and thermal stress). 26 The typical current-sweep I-V curves of Al/HfO x /Al and TaN/HfO x /Al devices are shown in Fig. 4.…”
Section: (C) and (D))mentioning
confidence: 99%
“…[1][2][3][4] Alternately, electrical resistance switch-based memory (RRAM) has attracted intense research interest as a promising candidate for use in next-generation non-volatile memory due to its high scalability down to a few nanometers and high-density integration with CMOS technology. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Conventional devices consist of a metal-insulator-metal (MIM) structure, with insulator resistance switching caused by the diffusion of oxygen vacancies/defects, charge carrier trapping and de-trapping, and Schottky barrier modulation to produce the memory effect. 5 Even though many dielectric materials such as HfO x (ref.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, resistive random access memory (RRAM) has received special attention and been regarded as one of the most promising candidates of next generation non-volatile flash memory devices, due to its many advantages such as simple sample fabrication, low power consumption, fast writing/erasing speed of $ns, and prolonged retention time of >10 years. 4 The RRAM behaviour has been observed in many employing oxide films, [5][6][7][8][9][10][11][12][13][14][15][16][17] 2-dimension materials, [18][19][20] nanowires, 21,22 and even organic semiconductors. [23][24][25] The electronic resistive switching memory (ERSM) behaviour, which is the characteristic of asymmetric current-voltage (I-V) shapes as one important kind of RRAM, has been observed in many materials such as ZnO nanowires, MoO 3 nanobelts, BiFeO 3 nanoislands, and eumelanin nanofilms.…”
mentioning
confidence: 99%