“…In particular, resistive random access memory (RRAM) has received special attention and been regarded as one of the most promising candidates of next generation non-volatile flash memory devices, due to its many advantages such as simple sample fabrication, low power consumption, fast writing/erasing speed of $ns, and prolonged retention time of >10 years. 4 The RRAM behaviour has been observed in many employing oxide films, [5][6][7][8][9][10][11][12][13][14][15][16][17] 2-dimension materials, [18][19][20] nanowires, 21,22 and even organic semiconductors. [23][24][25] The electronic resistive switching memory (ERSM) behaviour, which is the characteristic of asymmetric current-voltage (I-V) shapes as one important kind of RRAM, has been observed in many materials such as ZnO nanowires, MoO 3 nanobelts, BiFeO 3 nanoislands, and eumelanin nanofilms.…”