Role of graphene defects in corrosion of graphene-coated Cu(111) surface

Własny, I.; Dąbrowski, P.; Rogala, Maciej; Kowalczyk, P.J.; Pasternak, Iwona; Strupiński, Włodek; Baranowski, J. M.; Klusek, Z.

doi:10.1063/1.4795861

Cited by 86 publications

(70 citation statements)

References 36 publications

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“…However as with SAMS and other materials, the performance of 2D materials will be greatly challenged by the presence of defects, topography, and material heterogeneities that exist on the surfaces of metal interconnect structures. Studies by Wlasny 495 and Schiver 496 have already shown that while at the macro scale graphene can prevent corrosion of Cu, defects and imperfections in the graphene can allow corrosion at the nano-scale that would not be acceptable in state-of-the-art metal interconnects.…”

Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…The barriers between them are usually not continuous or might have high defect density. The breaking of hexagonal symmetry of 3 the lattice of graphene may serve as gateways for molecules and ions, thus lead to local corrosive changes in the chemical structure of copper [25]. Furthermore, different faces of copper crystals create different interfaces with graphene layers.…”

Section: Introductionmentioning

confidence: 99%

Impact of electrolyte intercalation on the corrosion of graphene-coated copper

et al. 2015

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“…Afterwards, both the hydrocarbon (e.g., CH 4 or C 3 H 8 ) and the H 2 gas are introduced into the reactor for a couple of minutes to grow the graphene layer. Finally, the copper substrate covered with graphene films is cooled down to room temperature in an Ar atmosphere [15][16][17][18].…”

Section: Synthesis Of Cvd-graphenementioning

confidence: 99%

CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

Januszko

Iwan

Maleczek

et al. 2017

Journal of Nanomaterials

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The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom6). Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate) (PET) via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD) technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO 2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m 2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

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Role of graphene defects in corrosion of graphene-coated Cu(111) surface

Cited by 86 publications

References 36 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Impact of electrolyte intercalation on the corrosion of graphene-coated copper

CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

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