Role of growth temperature and oxygen partial pressure on the structural and electrical properties of pulsed laser deposited La1−xSrxnO3−δ thin films

Maity, Santi P.; Dhar, A.; Ray, Subhabrata; Bhattacharya, Debasis

doi:10.1016/j.jpcs.2011.04.007

Cited by 6 publications

(2 citation statements)

References 32 publications

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“…Then, we have prepared LCFN thin films by PLD technique, using a target made from this powder. Since film oxygen concentration plays an important role in formation of the micro-structure, surface morphology and especially electronic and ionic conductivity of perovskite materials [17], we explored for an optimum oxygen pressure by which the more electrical conductivity is achieved. X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and atomic force microscope (AFM) were used as characterization tools.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition of La 0.6 Ca 0.4 Fe 0.8 Ni 0.2 O 3−δ thin films on SrTiO 3 : Preparation, characterization and electrical properties

et al. 2014

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Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition of La 0.6 Ca 0.4 Fe 0.8 Ni 0.2 O 3−δ thin films on SrTiO 3 : Preparation, characterization and electrical properties

et al. 2014

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“…Very few studies discuss morphology control of multi-cationic films, [31][32][33] and fewer still focus on LSMO film morphology control. 34,35 Through our work here, we demonstrate success in achieving high T c films of LSMO with complete morphology control and process reproducibility directly on Si. We quantitatively define separate PLD process parameters regimes to obtain dense and columnar LSMO films on Si, suited for top-down and bottom-up device architectures, respectively.…”

Section: Introductionmentioning

confidence: 81%

Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition

Nori

Kale

Ganguly

et al. 2014

Journal of Applied Physics

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Of all the colossal magnetoresistant manganites, La 0.7 Sr 0.3 MnO 3 (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As the first step towards this goal, it needs to be integrated with silicon via a well-defined process that provides morphology and phase control, along with reproducibility. This work demonstrates the development of pulsed laser deposition (PLD) process parameter regimes for dense and columnar morphology LSMO films directly on Si. These regimes are postulated on the foundations of a pressure-distance scaling law and their limits are defined post experimental validation. The laser spot size is seen to play an important role in tandem with the pressure-distance scaling law to provide morphology control during LSMO deposition on lattice-mismatched Si substrate. Additionally, phase stability of the deposited films in these regimes is evaluated through magnetometry measurements and the Curie temperatures obtained are 349 K (for dense morphology) and 355 K (for columnar morphology)-the highest reported for LSMO films on Si so far. X-ray diffraction studies on phase evolution with variation in laser energy density and substrate temperature reveals the emergence of texture. Quantitative limits for all the key PLD process parameters are demonstrated in order enable morphological and structural engineering of LSMO films deposited directly on Si. These results are expected to boost the realization of top-down and bottom-up LSMO device architectures on the Si platform for a variety of applications.

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Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

Pan

Xia

et al. 2014

Appl. Phys. A

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Role of growth temperature and oxygen partial pressure on the structural and electrical properties of pulsed laser deposited La1−xSrxnO3−δ thin films

Cited by 6 publications

References 32 publications

Pulsed laser deposition of La 0.6 Ca 0.4 Fe 0.8 Ni 0.2 O 3−δ thin films on SrTiO 3 : Preparation, characterization and electrical properties

Pulsed laser deposition of La 0.6 Ca 0.4 Fe 0.8 Ni 0.2 O 3−δ thin films on SrTiO 3 : Preparation, characterization and electrical properties

Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition

Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

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