Role of hydrogen in hydrogenated microcrystalline silicon

Itoh, Takashi; Yamamoto, Kazuki; Harada, H; Yamana, N; Yoshida, Norimitsu; Inouchi, Hiroki; Nonomura, Shuichi; Nitta, Shoji

doi:10.1016/s0927-0248(00)00179-3

Cited by 10 publications

(3 citation statements)

References 8 publications

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“…. It is well known that in nc-Si:H films, majority of H is bonded to the surface of the nanocrystallites [48]. As probed by Raman analysis and x-ray diffraction analysis, increase in R H and R Ar increases the density of nanocrystallite grains in the film due to increase in volume fraction of crystallites.…”

Section: Variation In Hydrogen Content and Microstructure Parametermentioning

confidence: 99%

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Bakr¹,

Mubarak²,

Habubi³

2013

Int. J. Thin Film Sci. Tec.

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In this work we present a detailed structural, optical and electrical characterization of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot wire chemical vapor deposition (HW-CVD) as a function of hydrogen (H 2), argon (Ar) and helium (He) dilution of silane. A variety of analysis techniques such as Raman spectroscopy (RS), x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, UV-Visible spectroscopy and conductivity measurements were used to characterize the grown films. We observed that these properties are greatly influenced by dilution of silane with H 2 , Ar and He. Characterization of these films by Raman spectroscopy and low angle x-ray diffraction revealed that the increase in H 2 and Ar dilution of silane endorses the growth of crystallinity in the films whereas increase in He dilution of silane deteriorates the film properties. An attempt has been made to explain the fundamental differences in nanocrystallization growth mechanism by addition of H 2 , Ar and He in silane.

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Section: Variation In Hydrogen Content and Microstructure Parametermentioning

confidence: 99%

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Bakr¹,

Mubarak²,

Habubi³

2013

Int. J. Thin Film Sci. Tec.

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“…, where α(ω) is the wave number dependent absorption coefficient, proportionality constant A x = 9 × 10 19 cm −2 , and N int is the total atomic density of the films (5× 10 22 cm −3 for c-Si) [11,12] . The hydrogen concentration declines with the increase in R H , and thus improvement of crystallization of the samples [13] .…”

Section: Ftir Spectramentioning

confidence: 99%

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH₄/H₂Mixture

Chen

Qiu

Liu

et al. 2009

Plasma Sci. Technol.

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Hydrogenated nanocrystalline silicon thin films were fabricated from SiH4 with H2 dilution at a low substrate temperature of 200 o C by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from SiH to SiH2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.

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“…However, hydrogen has its own importance in hydrogenated amorphous silicon (aSi : H) as it passivates the dangling bonds and improves the optoelectronic properties. The density of hydrogen in microcrystalline silicon (μc-Si : H) films is also important as it passivates grain boundaries [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

et al. 2012

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The mechanical properties of hydrogenated silicon thin films deposited using high-frequency PECVD process were studied, which certainly have importance for optoelectronic devices particularly for getting stability and long operating lifetime in harsh conditions. Nanoindentation technique was used to measure the load versus displacement curves, hardness (H), elastic modulus (E), plastic resistance parameter (H/E), elastic recovery (ER), and plastic deformation energy (U r ), while laser scanning stress measurement setup was used to measure the intrinsic stress of these films. The concentration of bonded hydrogen in these films was found in the range of 3.6 to 6.5 at. % which was estimated using integrated intensity of IR absorption peak near 640 cm −1 . Dependence of mechanical properties of these films on hydrogen content and bonding environment has been investigated. The film containing minimum hydrogen content (3.6%) shows the maximum elastic recovery (52.76%) and minimum plastic deformation energy (3.95 × 10 −10 J). Surface roughness measured by AFM was found to decrease with the increase in hydrogen content in the film. The dependency of stress on the plasma frequency and applied power has also been discussed.

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Role of hydrogen in hydrogenated microcrystalline silicon

Cited by 10 publications

References 8 publications

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH₄/H₂Mixture

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

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Role of hydrogen in hydrogenated microcrystalline silicon

Cited by 10 publications

References 8 publications

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Impact of dilution gases on structure, properties and growth of hydrogenated nanocrystalline silicon (nc-Si:H) prepared by HW-CVD method

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH4/H2Mixture

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

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Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH₄/H₂Mixture