Role of hydrogen in the growth of boron nitride: Cubic phase versus hexagonal phase

Han, Dong; Li, Xianbin; Sun, Hong–Bo; Zhang, S.B.; Xie, Songhai; Limpijumnong, Sukit; Chen, Zhanguo

doi:10.1016/j.commatsci.2013.09.065

Cited by 5 publications

(2 citation statements)

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“…Thus, it is probably due to the fact that the introduction of hydrogen will etch the deposited film partially while stabilizing the cubic phase. [39] The deposition rate of a high c-BN content film grown at 400 • C is studied with hydrogen content increasing as displayed in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

et al. 2016

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The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-µm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H 2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.

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Section: Resultsmentioning

confidence: 99%

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

et al. 2016

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“…c-BN can also be grown by CVD, again making H a likely unintentional impurity [13]. Less is known about H i in c-BN compared to diamond, though earlier work investigated its ability to passivate nitrogen vacancies [14] and a recent study indicated that H i is more stable than H 2 molecules in c-BN for all growth conditions [15]. However, those calculations were based on the LDA, and charge states of H i other than the neutral state were not explored, motivating a more detailed investigation with more advanced techniques.…”

Section: Introductionmentioning

confidence: 99%

Surprising stability of neutral interstitial hydrogen in diamond and cubic BN

Lyons

Walle

2016

J. Phys.: Condens. Matter

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In virtually all semiconductors and insulators, hydrogen interstitials (Hi) act as negative-U centers, implying that hydrogen is never stable in the neutral charge state. Using hybrid density functional calculations, we find a different behavior for Hi in diamond and cubic BN. In diamond, Hi is a very strong positive-U center, and the H 0 i charge state is stable over a Fermi-level range of more than 2 eV. In cubic BN, a III-V compound similar to diamond, we also find positive-U behavior, though over a much smaller Fermi-level range. These results highlight the unique behavior of Hi in these covalent wide-band-gap semiconductors.

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