Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings

Raniero, Leandro; Ferreira, I.; Pimentel, Ana; Gonçalves, A.; Canhola, Paulo; Fortunato, Elvira; Martins, Rodrigo

doi:10.1016/j.tsf.2005.12.057

Cited by 89 publications

(51 citation statements)

References 12 publications

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“…The obtained values show that they are very satisfactory compared to those of other operating TCOs (about 1.0 × 10 -3 for ZnO [15], and 2.0 × 10 -3 for ZGO [16] and we can observe an increase of this factor with the annealing temperature.…”

Section: Annealing Temperature Effectsupporting

confidence: 62%

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Marie¹,

Portier

Cardin

2008

Physica Status Solidi (a)

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Section: Annealing Temperature Effectsupporting

confidence: 62%

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Marie¹,

Portier

Cardin

2008

Physica Status Solidi (a)

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“…In order to create the same cathode surface conditions each time [10], in cm-size chamber, the cathode was treated by moderately high-current discharge in hydrogen (30 µA) until a stable breakdown voltage is achieved. The same treatment but using Ar was done in the case of micrometer chamber since hydrogen discharge may damage ITO film on the anode [19].…”

Section: Methodsmentioning

confidence: 99%

Breakdown and discharge regimes in standard and micrometer size dc discharges

Škoro¹

2012

J. Phys.: Conf. Ser.

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Breakdown and discharge regimes in standard and micrometer size dc discharges Abstract. In this paper, an overview of our recent experimental studies of the breakdown and operation of non-equilibrium discharges in centimetre and micrometer size geometries is presented. In the centimetre size geometries, we focused on elementary processes and phenomenology in gases used for some of the currently most attractive applications of low temperature plasmas -fluorocarbon gases (CF 4 , CHClF 2 ) and water vapour. Measurements were performed at electrode separation d = 1.1 cm, in a pressure range from 0.1 to 5 Torr. In the case of micro-discharges, the emphasis was on testing the validity of standard scaling laws and proper determination of scaling parameters pd and j/p 2 . This was done at electrode gaps of 200 and 500 μm and pressures of 50 and 20 Torr in argon. The investigation is based on measurements of breakdown potentials (Paschen curves) and Volt-Ampere characteristics, supported by simultaneous ICCD imaging of the discharges. IntroductionOwing to many unique properties, low temperature non-equilibrium discharges have been used in a large number of applications. Fundamental investigations lead to new applications but, recently, in many cases, the needs of applications led to numerous fundamental results. On all accounts, the complexity of these discharges call for full understanding of discharge processes in order to make efficient and reliable devices. Moreover, along with numerous non-equilibrium discharge sources in centimetre size [1,2], many sources with micrometre characteristic dimensions have been introduced recently [3,4]. Hence, an ongoing direction of research about discharges in molecular gases and gas mixtures of interest for applications [5] has been appended with new challenges of discharges taking place between electrodes separated by few tens or hundreds of micrometers -micro-discharges [6]. Additionally, a new type of non-equilibrium discharges taking place in or near liquids has emerged [7], bringing new possibilities for applications together with a whole new set of issues to resolve.Accordingly, results presented in this paper are divided in two sections. The first one deals with measurements conducted with cm-size chamber. Using previously gathered experience on standard size non-equilibrium discharges in rare gases at low pressures [8][9][10][11][12], our research is continued with experimental measurements in gases of interest for applications: fluorocarbons (CF 4 and CHClF 2 ) which are widely used for plasma etching (e.g. [13]) and water vapour that is present as working environment of numerous commercial devices [14]. Measurements in these gases aim to provide reliable and systematic data sets required for plasma models that may be extended to applications involving those gases.

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“…1 Highly conductive n-type doped ZnO, on which we will focus in this article, is a transparent conductive oxide ͑TCO͒ which is studied as a valid alternative to the widely used tin-doped indium oxide ͑ITO͒ and SnO 2 :F for flat panel displays and solar cell applications. [2][3][4] The p-type ZnO fabrication, necessary for ZnO-based optoelectronic devices, has proven to be more difficult obtain due to the native n-type defects and low dopant solubility. 5,6 Several dopants are used to achieve n-type doping in ZnO, the most common being group III elements, such as B, Al, Ga, and In ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

Volintiru

Creatore

Kniknie

et al. 2007

Journal of Applied Physics

115

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Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance Rs and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (Rs<6 Ω∕□ for a film thickness above 1200 nm) and very rough (>4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (Rs≈100 Ω∕□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth.

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Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings

Cited by 89 publications

References 12 publications

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

Breakdown and discharge regimes in standard and micrometer size dc discharges

Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

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