Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Zhang, H. Z.; Ang, Diing Shenp; Gu, Chenjie; Yew, Kwang Sing; Wang, X. P.; Lo, Guo‐Qiang

doi:10.1063/1.4903341

Cited by 30 publications

(27 citation statements)

References 17 publications

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“…Excellent agreement between the fitting and the measurement is achieved, which indicates that the equivalent circuit shown in Fig. 2 [16], [17], the resistivity is estimated to be ∼400 · cm, which is within the reported resistivity range of TiON films [18]. To examine the behavior of different high-resistance states, we conducted the complex impedance measurement after each reset process at different values of V stop , and the result is shown in Fig.…”

Section: Resultssupporting

confidence: 67%

Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Chen

et al. 2015

IEEE Trans. Electron Devices

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Multilevel high-resistance states are achieved in TiN/HfO x /Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components R s , R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model. Index Terms-Impedance spectroscopy, multilevel high-resistance states, resistive switching random access memory (RRAM).

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Section: Resultssupporting

confidence: 67%

Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Chen

et al. 2015

IEEE Trans. Electron Devices

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“…The switching mechanism is associated with redistribution processes of oxygen vacancies [1,15,16] in the insulating layer whose concentration depends on value x in a HfO x film. Although the atomic layer deposition (ALD) [17][18][19] technology is generally used for HfO x layer synthesis, the ion beam sputtering deposition (IBSD) method has its own advantages. This method produces thin films with growth uniformity, reduced surface roughness and adhesion to the substrate even for films grown at room temperature.…”

Section: Introductionmentioning

confidence: 99%

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

Алиев¹,

Gerasimova²,

Кручинин³

et al. 2016

Mater. Res. Express

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Non-stoichiometric HfO x films of different chemical composition (x<2) were fabricated by ionbeam sputtering deposition (IBSD) at room temperature. The ratio of O and Hf atoms in films x was varied by setting the O 2 partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf 4 O 7 suboxide and stoichiometric HfO 2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf 4 O 7 suboxide concentration is maximal at x=1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO 2 , when annealed at high temperature.

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“…In an earlier study [68] Ab-initio simulation has shown that the energy barrier for metal-ion migration in an oxide is reduced in a region with a high vacancy defect concentration [132]. below.…”

Section: Physical Mechanism Analysismentioning

confidence: 97%

“…4.6 of ref. [68]). The absence of negative set/positive reset switching in this device is a consequence of the inert Pt replacing TiN as the bottom electrode and is consistent with the common view that TiN serves as an oxygen "reservoir" which enables bipolar resistive switching [68].…”

Section: Physical Mechanism Investigation Of Self-compliance Resistivmentioning

confidence: 99%

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A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

Zhang¹

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I would like to give my sincere gratitude to my supervisor Prof. Ang Diing Shenp, for his constructive discussions, strong technical guidance, and inspiring ideas throughout the course of my Ph.D. research in the Electrical and Electronic Engineering Department of Nanyang Technological University (NTU). His immense knowledge of device physics, sharp analytical skills, effective writing skills, high research integrity, and great passion for research have sparked my growing enthusiasm in the research field. I am very grateful and lucky to have the opportunity to work with such an outstanding professor. I would like to take this opportunity to thank Nanyang Technological University, Singapore, for offering me a research scholarship and great research facilities. Many thanks to (i) the NTU clean room (CR1 and CR2) staff for providing me equipment trainings and technical support throughout my sample fabrication work, (ii) Mr. Chow Kam Wah and Mrs. Seet Lye Ping from Semiconductor Characterization Lab 2, for their technical support on the prober stations, (iii) Mr.

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Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Cited by 30 publications

References 17 publications

Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Study of Multilevel High-Resistance States in HfO<sub><italic>x</italic></sub>-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

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