Role of interstitial hydrogen and voids in light-induced metastable defect formation in hydrogenated amorphous silicon: A model

Longeaud, Christophe; Roy, D.; Saadane, O.

doi:10.1103/physrevb.65.085206

Cited by 50 publications

(33 citation statements)

References 27 publications

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“…This gives support to the fact there is not only diffusion of molecular hydrogen, but also reconstruction of Si-H bonding during light-soaking [36], and molecular hydrogen should play an important role in this process [42].…”

Section: Hydrogen Exodiffusion Studiesmentioning

confidence: 83%

“…Such an active hydrogen evolution could be also explained by the existence of molecular hydrogen. Furthermore, a multi-body motion model has been proposed in which light-induced molecular hydrogen formation mediated by (another) interstitial molecular hydrogen [42]. In the model, atomic hydrogen comes to passivate a newly created dangling bond left by another atomic hydrogen parted from bond centered position, and two hydrogen atoms form a molecular hydrogen or interstitial hydrogen.…”

Section: Discussionmentioning

confidence: 99%

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Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

et al. 2012

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We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells -namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current density (Jsc) -we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns). Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.

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Section: Hydrogen Exodiffusion Studiesmentioning

confidence: 83%

Section: Discussionmentioning

confidence: 99%

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

et al. 2012

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“…Кроме того, в аморфной сетке существуют более и менее упорядоченные области соответственно с меньшей и большей концентрацией водорода [2][3][4]. Такая сложная структура пленок a-Si : H дает возможность образования врожденных и фотоиндуцированных дефектов разных типов [5][6][7][8].…”

Section: Introductionunclassified

Изменение кинетики термической релаксации фотоиндуцированной при T=425 K метастабильной темновой проводимости пленок a-Si : H слабой подсветкой на начальном этапе релаксации

Курова¹,

Ормонт²

2017

Физика И Техника Полупроводников

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Исследуется влияние слабой подсветки на начальном этапе релаксации метастабильной фотоиндуцированной при T=425 K темновой проводимости нелегированной пленки a-Si : H на скорость ее последующей термической релаксации. Установлено, что кинетика релаксации после подсветки и без нее описывается растянутыми экспонентами с величинами параметров tau0 и beta, меньшими в случае подсветки. Показано, что уменьшение этих параметров увеличивает скорость термической релаксации метастабильной темновой проводимости пленки. Так как температура и интенсивности освещения, при которых проводились исследования, невелики, изменения скорости релаксации метастабильной проводимости вряд ли связаны с существенной структурной перестройкой аморфной сетки. Однако это может быть обусловлено изменением системы водородных связей, в частности, в результате процессов генерации и релаксации подсветкой медленных фотоиндуцированных дефектов. DOI: 10.21883/FTP.2017.04.44332.8366

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“…In addition, with increased temperature, BCH decays irreversibly and other known infrared active Si-H complexes begin to appear. Although several calculations and experiments describe the possible role of BCH as an intermediate stage in the dissociation of various Si-H bonds [1,15], direct experimental observation is not available.…”

Section: Introductionmentioning

confidence: 99%

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

et al. 2011

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We report in-situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect associated Si-H complexes were prepared by low temperature proton implantation in silicon followed by room temperature annealing. As a result of subsequent low temperature 3 He ion irradiation, we observed 1) ion induced dissociation of Si-H complexes; 2) a notable difference in the dissociation rate of interstitial type and vacancy type defects; and unexpectedly, 3) the growth of bond-center hydrogen (BCH) which had previously been observed only in association with low-temperature proton implantation. These findings provide new insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.

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Role of interstitial hydrogen and voids in light-induced metastable defect formation in hydrogenated amorphous silicon: A model

Cited by 50 publications

References 27 publications

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

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