Role of ITO electrode in the resistive switching behavior of TiN/HfO₂/ITO memory devices at different annealing temperatures

Abstract

TiN/HfO 2 /ITO memory devices were fabricated and annealed at 200, 300, and 400 °C. At room temperature (RT), 200 °C, and 300 °C, the devices show the self-compliance phenomenon and a low SET voltage of 0.2 V, while at 400 °C the SET voltage increases to 1.1 V and the low resistance state (LRS) current increases to 8 mA. We deduced that the impact of annealing temperature on the resistive switching behavior is mainly attributed to the indium tin oxide (ITO) electrode. Some Sn 4+ ions in the ITO electrode drift towards the HfO 2 layer owing to the electrical force, then an interfacial layer is formed and acts as an internal resistor. At 400 °C, the remarkable increase of LRS current is attributed to the decreases in both the ITO electrode resistance and the interface resistance.

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

“…22,23 Several reports on memristor devices that employ ITO materials suggest that indium (In) and tin (Sn) atoms originated from the ITO electrode may benefit the switching mechanism in memristor devices. [24][25][26][27][28][29][30] However, in our study, we found that an excessive out-diffusion species from the ITO electrode leads to unstable switching; moreover, in contrast to some of those reports, Sn is found to be immobile that may not have a significant role in the switching mechanism.…”

Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

“…In recent years, it has been reported that indium tin oxide (ITO) plays an important role in improving the performance of RRAM devices. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Studies have shown the self-compliance behavior of nonvolatile RRAM with an ITO electrode. 13,19) Shih et al reported on an ultralow switching voltage of ITO-based RRAM with an inserted SiO 2 thin film.…”

Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory

“…[5][6][7][8][9][10][11] According to previous studies, RRAM with an indium-tinoxide (ITO) electrode has characteristics of a self-compliance current and low operation voltages. [12][13][14][15][16][17][18] Our previous research also indicated that co-sputtering ITO with oxygen gas (O 2 ) as the insulator produces even lower operation voltages. 19) In addition, applying different dielectric constant (k-value) materials as the insulator has been discussed because k-value affects electric field concentration.…”