Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

Islam, Sharnali; Li, Zuanyi; Dorgan, Vincent E.; Bae, Myung‐Ho; Pop, Eric

doi:10.1109/led.2012.2230393

Cited by 76 publications

(81 citation statements)

References 16 publications

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“…36 We can neglect lateral heat flow here, as the experimental sample 34 which is used to benchmark our simulations is significantly larger (4 × 7 μm) than the thermal healing length in graphene on 300 nm SiO2 (LH ~ 0.2 μm). 26,[37][38][39] Lateral heat sinking to the contacts is negligible in devices of length L ≫ 3LH. The temperature profiles of shorter or narrower devices can be treated through finite element simulations 37 or sometimes through analytical solutions.…”

Section: A Transport Modelmentioning

confidence: 99%

“…26,[37][38][39] Lateral heat sinking to the contacts is negligible in devices of length L ≫ 3LH. The temperature profiles of shorter or narrower devices can be treated through finite element simulations 37 or sometimes through analytical solutions. 38,39 Combining all these mechanisms we arrive at a multi-scale physics model, which can be described with a set of equations:…”

Section: A Transport Modelmentioning

confidence: 99%

“…However, in smaller, approximately sub-0.3 μm graphene devices the lateral heat spreading to the contacts also becomes important and must be included in a complete thermal analysis. 37,38 ) A thinner SiO2 corresponds to lower thermal resistance, better thermal grounding, less lattice heating and hence a higher vd. The velocity saturation is much weaker when the effective SiO2 thickness is less than 100 nm, and the high-field behavior for graphene supported by 30 nm of SiO2 (on Si) is very close to the perfect heat sinking case.…”

Section: B Role Of Self-heatingmentioning

confidence: 99%

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Theoretical analysis of high-field transport in graphene on a substrate

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We investigate transport in graphene supported on various dielectrics (SiO2, BN, Al2O3, HfO2) through a hydrodynamic model which includes self-heating and thermal coupling to the substrate, scattering with ionized impurities, graphene phonons and dynamically screened interfacial plasmonphonon (IPP) modes. We uncover that while low-field transport is largely determined by impurity scattering, high-field transport is defined by scattering with dielectric-induced IPP modes, and a smaller contribution of graphene intrinsic phonons. We also find that lattice heating can lead to negative differential drift velocity (with respect to the electric field), which can be controlled by changing the underlying dielectric thermal properties or thickness. Graphene on BN exhibits the largest highfield drift velocity, while graphene on HfO2 has the lowest one due to strong influence of IPP modes.

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Section: A Transport Modelmentioning

confidence: 99%

Section: A Transport Modelmentioning

confidence: 99%

Section: B Role Of Self-heatingmentioning

confidence: 99%

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Theoretical analysis of high-field transport in graphene on a substrate

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et al. 2014

Journal of Applied Physics

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“…89 Temperature gradients have also been observed in atomic force microscopes 90,91 and nanowires, 92 as well as in situations involving irradiated particles immersed in fluids, 93-102 magnetic nanocontacts, 103 or microcavities subject to strong photothermal effects. 104 Material inhomogeneities also arise in microcavity lasers stemming from nonlinear effects.…”

Section: Introductionmentioning

confidence: 99%

Fluctuating volume-current formulation of electromagnetic fluctuations in inhomogeneous media: Incandescence and luminescence in arbitrary geometries

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We describe a fluctuating volume-current formulation of electromagnetic fluctuations that extends our recent work on heat exchange and Casimir interactions between arbitrarily shaped homogeneous bodies [Phys. Rev. B. 88, 054305] to situations involving incandescence and luminescence problems, including thermal radiation, heat transfer, Casimir forces, spontaneous emission, fluorescence, and Raman scattering, in inhomogeneous media. Unlike previous scattering formulations based on field and/or surface unknowns, our work exploits powerful techniques from the volume-integral equation (VIE) method, in which electromagnetic scattering is described in terms of volumetric, current unknowns throughout the bodies. The resulting trace formulas (boxed equations) involve products of well-studied VIE matrices and describe power and momentum transfer between objects with spatially varying material properties and fluctuation characteristics. We demonstrate that thanks to the low-rank properties of the associated matrices, these formulas are susceptible to fast-trace computations based on iterative methods, making practical calculations tractable. We apply our techniques to study thermal radiation, heat transfer, and fluorescence in complicated geometries, checking our method against established techniques best suited for homogeneous bodies as well as applying it to obtain predictions of radiation from complex bodies with spatially varying permittivities and/or temperature profiles.

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“…that there is no thermal barrier between the graphite and SiO 2 ) and further work is underway to investigate this. However, the low thermal time constant of graphene transistors calculated previously 25 suggests it will be possible to obtain higher intensities at high frequencies through electrical and thermal management.…”

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Prospective for graphene based thermal mid-infrared light emitting devices

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We have investigated the spatial and spectral characteristics of mid-infrared thermal emission from large area Chemical Vapor Deposition (CVD) graphene, transferred onto SiO2/Si, and show that the emission is broadly that of a grey-body emitter, with emissivity values of approximately 2% and 6% for mono- and multilayer graphene. For the currents used, which could be sustained for over one hundred hours, the emission peaked at a wavelength of around 4 μm and covered the characteristic absorption of many important gases. A measurable modulation of thermal emission was obtained even when the drive current was modulated at frequencies up to 100 kHz.

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Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

Cited by 76 publications

References 16 publications

Theoretical analysis of high-field transport in graphene on a substrate

Theoretical analysis of high-field transport in graphene on a substrate

Fluctuating volume-current formulation of electromagnetic fluctuations in inhomogeneous media: Incandescence and luminescence in arbitrary geometries

Prospective for graphene based thermal mid-infrared light emitting devices

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