2011
DOI: 10.1002/adma.201102712
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Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells

Abstract: A hybrid approach to solar cells is demonstrated in which a silicon p-n junction, used in conventional silicon-based photovoltaics, is replaced by a room-temperature fabricated silicon/organic heterojunction. The unique advantage of silicon/organic heterojunction is that it exploits the cost advantage of organic semiconductors and the performance advantages of silicon to enable potentially low-cost, efficient solar cells.

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Cited by 199 publications
(129 citation statements)
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“…[ 3,4 ] Therefore, there has been considerable interest in organic/c-Si heterojunction solar cells that use organic conductive polymers, such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), which block electrons but let holes pass. [5][6][7][8][9][10][11] The single heterojunction of PEDOT:PSS/c-Si works as a photovoltaic device without using the p-n junction and TCO layer. η values of 10-13% have been achieved by adjusting the fi lm thickness of conductive PEDOT:PSS and the resistivity of the c-Si substrate without using textured c-Si, an anti-refl ection (AR) coating layer, and a back-surface fi eld (BSF) layer.…”
mentioning
confidence: 99%
“…[ 3,4 ] Therefore, there has been considerable interest in organic/c-Si heterojunction solar cells that use organic conductive polymers, such as poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), which block electrons but let holes pass. [5][6][7][8][9][10][11] The single heterojunction of PEDOT:PSS/c-Si works as a photovoltaic device without using the p-n junction and TCO layer. η values of 10-13% have been achieved by adjusting the fi lm thickness of conductive PEDOT:PSS and the resistivity of the c-Si substrate without using textured c-Si, an anti-refl ection (AR) coating layer, and a back-surface fi eld (BSF) layer.…”
mentioning
confidence: 99%
“…[26,27] Schottky junction photovoltaics (some with significant efficiencies) are, of course, well-studied devices. [28][29][30][31][32][33][34] Most are based on bulk interfaces as with the most common p-n photovoltaics in which one of the semiconductor layers is replaced with a material that behaves as a metal, often ITO, which also has the beneficial property of being transparent to light. Additionally, a device that foreshadows what we report here, consisting of GaAs rods produced by dry etching a GaAs single crystal through a "mask" formed by close-packed silica microspheres, which are pressed against PEDOT:PSS has also been reported.…”
mentioning
confidence: 99%
“…Yet, PEDOT:PSS suffers from chemical instability related to its hygroscopic character and can cause severe device degradation [6]. A variety of p-type polymeric semiconductors have also been studied for silicon hybrid devices [7,8], although they could suffer from similar instability issues.…”
Section: Introductionmentioning
confidence: 99%