Role of Mo:Na layer on the formation of MoSe2 phase in Cu(In,Ga)Se2 thin film solar cells

Lin, Yi‐Cheng; Hong, Ding-Hao; Hsieh, Y.F; Wang, Li-Ching; Hsu, Hung-Ru

doi:10.1016/j.solmat.2016.06.024

Cited by 28 publications

(10 citation statements)

References 28 publications

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“…Without the interface layer, a Schottky contact will be formed at the Mo/CIGS contact, causing significant problem in resistive losses [112]. However, excessive formation of MoSe 2 can lead to the delamination of the film and adverse effect on V oc and FF of the completed CIGS solar cells due to high resistance of the MoSe 2 [113,114]. Therefore, a range of specific MoSe 2 thickness between 100 nm and 200 nm is required to ensure good adhesion and electrical contact between Mo/CIGS [115][116][117].…”

Section: Formation and Thickness Influence Factors Of Mose 2 Interfacmentioning

confidence: 99%

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Ong

Ramasamy

Maniscalco

et al. 2018

International Journal of Photoenergy

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Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.

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Section: Formation and Thickness Influence Factors Of Mose 2 Interfacmentioning

confidence: 99%

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Ong

Ramasamy

Maniscalco

et al. 2018

International Journal of Photoenergy

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“…Thermal and chemical stability during high temperature deposition, outstanding electrical conductivity, excellent adhesion on glass, and formation of ohmic contact with CIGS via an unintentionally induced adventitious p-MoSe 2 interfacial layer have rendered Mo more advantageous than other metals [1,2]. Additionally, Mo thin films can also affect the out-diffusion of sodium from soda lime glass (SLG) substrates [3,4,5]. These make Mo a primary choice as a back-contact material, not only for the common CIGS material, but also for the industry standard for novel and selenium-free absorber layers, such as Cu 2 ZnSnS 4 (CZTS), CuSnS 3 (CTS) and SnS [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Effects of Heating Mode and Temperature on the Microstructures, Electrical and Optical Properties of Molybdenum Thin Films

et al. 2018

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In this paper, molybdenum (Mo) thin films are deposited on soda-lime glass (SLG) substrates by direct current magnetron sputtering and heated in three different modes at different temperatures, including substrate heating, annealing treatment, and both substrate heating and annealing treatment. The effects of heating temperature and heating mode on the structures, morphology, optical and electrical properties of Mo thin films were systematically investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-visible spectrophotometer (UV-vis spectra). It is shown that as the substrate and annealing temperature increase, the crystallinity of Mo thin films is improved, and the grain sizes become bigger. Especially in the mode of both substrate heating and annealing treatment at higher temperature, the obtained Mo thin films show higher crystallinity and conductivity. Moreover, with the increase of substrate and annealing temperature in different heating modes, both the surface compactness of Mo films and the optical reflectance increase correspondingly. Furthermore, the Mo film, prepared at the substrate heating temperature of 400 °C and annealed at 400 °C, showed excellent comprehensive performance, and the resistivity is as low as 1.36 × 10−5 Ω·cm. Using this optimized Mo thin film as an electrode, copper indium gallium selenium (CIGS) solar cells have a maximum photo-conversion efficiency of 12.8%.

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“…Fill factor (FF) of the CIGS solar cells due to high resistance of the MoSe2 [13], [14]. A thinner MoSe2 layer can be achieved by reducing the selenization temperature and duration, but this may affect the crystallisation of the CIGS absorber layer.…”

Section: Introductionmentioning

confidence: 99%

Formation of MoO_x barrier layer under atmospheric based condition to control MoSe₂ formation in CIGS thin film solar cell

Ong

Ramasamy

Arnou

et al. 2018

Materials Technology

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Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOx compound (MoO2 and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOx barrier layer is able to control the formation of MoSe2 effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24% with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices.

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Role of Mo:Na layer on the formation of MoSe2 phase in Cu(In,Ga)Se2 thin film solar cells

Cited by 28 publications

References 28 publications

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Effects of Heating Mode and Temperature on the Microstructures, Electrical and Optical Properties of Molybdenum Thin Films

Formation of MoO_x barrier layer under atmospheric based condition to control MoSe₂ formation in CIGS thin film solar cell

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