electron-doped) manganites have sparked a surge of research activities as a supplement for the divalent ions substituted (hole-doped) manganites, showing great potential for the development of all-manganites-based p-n junctions and electronic devices. [7][8][9][10] Unlike other tetravalent elements, hafnium has a sole tetravalent or zero valence state. This feature makes La 1-x Hf x MnO 3 an excellent candidate for investigating the electronic structures, Jahn-Teller lattice distortion and double-exchange interaction between the Mn 3+ -Mn 2+ ions in electron-doped manganites instead of that between the Mn 3+ -Mn 4+ ions in hole-doped manganites. The subtle balance of free energy between the coexistent phases in La 1-x Hf x MnO 3 films is always unstable and can thus be easily tipped by an external stimulus, such as current, magnetic field, stress, etc., which causes drastic modification of properties of the films. For example, Wang et al. [11] reported that a magnetic field of H = 6 T increases the Curie temperature by 32 K with a magnetoresistance (MR) of 300% near Curie temperature for La 0.9 Hf 0.1 MnO 3 films on SrTiO 3 substrates. Xing et al. [12] found current induced abnormal and giant electroresistance effect (1257%) and the change of the ground state from metallic to insulating phases for La 0.9 Hf 0.1 MnO 3 films on LaAlO 3 substrates. It is noteworthy that Wu et al. [13] observed that the substrate-induced epitaxial lateral tensile strain enhances the metal-to-insulator transition temperature as the thickness is reduced from 80 to 15 nm for La 0.8 Hf 0.2 MnO 3 films on SrTiO 3 substrates. This result is in contrast to those of other hole-doped manganite films, which isThe macroscopic physical properties and functionalities of strongly correlated complex oxides usually originate from and depend sensitively on microscopic interactions, which can be controlled by an external stimulus. Here, in electron-doped La 0.85 Hf 0.15 MnO 3 /Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 multiferroic heterostructure, the role of phase separation in manipulating charge ordering and electronic transport by piezo-strain and magnetic field is determined. The electric-field-induced lateral compressive piezo-strain suppresses the chargeordering transition temperature and decreases the film resistance with a giant gauge factor of 27 368, due to the enhancement of the double-exchange interaction between the Mn 3+ -Mn 2+ ions and the suppression of the electronphonon coupling stemming from the Jahn-Teller deformation. Moreover, the magnetic field can weaken the piezo-resistance effect by 342 times. This result, together with elastically controlled magnetoresistance effect, demonstrates intimate correlation between the piezo-strain-induced and magneticfield-induced effects by adjusting phase separation tendency. The findings indicate the importance of phase separation in multi-field quantum control of electron-doped perovskite manganites.