Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers

Braithwaite, J.; Silver, M.; Wilkinson, V. A.; O’Reilly, Eoin P.; Adams, A.R.

doi:10.1063/1.114916

Cited by 33 publications

(17 citation statements)

References 10 publications

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“…The role of non-radiative recombination and gain in this context has been discussed in the literature. [15][16][17] Pointing out the significance of the gain in determining the temperature sensitivity Piprek et al required higher Auger parameters than used here to reproduce their experimental data. 13 A good fit to the experimental findings could be obtained for the free carrier approach using increased Auger recombination as has been demonstrated by Piprek et al using a constant linewidth broadening parameter and, although not shown here, has been reproduced by our simulator using similar Auger parameters as in.…”

Section: Fabry-perot Multiple Quantum Well Lasermentioning

confidence: 96%

Integration of microscopic gain modeling into a commercial laser simulation environment

Grote¹,

Heller²,

Scarmozzino³

et al. 2003

SPIE Proceedings

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We demonstrate the integration of microscopic gain modeling into the laser design tool LaserMOD, which is derived from the Minilase II simulator. 1 A microscopic many body theory of the semiconductor allows for the accurate modeling of the spectral characteristics of the material gain. With such a model, the energetic position of the gain peak, the broadening due to collisions, and therefore, the absolute magnitude of the gain can be predicted based solely on material parameters. In contrast, many simpler approaches rely on careful calibration of model parameters requiring additional effort and experimental studies. In our full scale laser simulation multi dimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field itself is computed self consistently. We demonstrate our approach on an example of a Fabry-Perot laser structure with GaInAsP multiple quantum wells for 1.55 µm emission wavelength.

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Section: Fabry-perot Multiple Quantum Well Lasermentioning

confidence: 96%

Integration of microscopic gain modeling into a commercial laser simulation environment

Grote¹,

Heller²,

Scarmozzino³

et al. 2003

SPIE Proceedings

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“…It gives the differlog (electron density (cm-3 ential quantum efficiency 7/d7/i (2) am + i which depends on the internal optical losses (a) and on the enhancement of carrier losses above threshold (ij). The differential internal efficiency m = LIstim/zI is the fraction of the total current increment LI above threshold that results in stimulated emission of photons.…”

Section: Models and Parametersmentioning

confidence: 99%

Advanced analysis of high-temperature failure mechanisms in telecom lasers

Piprek

2001

Semiconductor Lasers for Lightwave Communication Systems

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Laser performance degradation at elevated temperature often requires the use of costly cooling devices. Much effort has been devoted to understand and overcome the high-temperature failure of laser diodes used in telecommunication applications (wavelength 1.3-1.6 gm). Various physical mechanisms have been proposed to explain high-temperature effects, including Auger recombination, carrier leakage, intervalence-band absorption, gain reduction and others. The discussion of the dominating effects is still controversial. One reason for this controversy is the use of simplified theoretical models that emphazise selected mechanisms. One-sided models lead to onesided interpretations of measurements. In this paper, high-temperature measurements on InP laser diodes are analyzed using a comprehensive laser model that includes all relevant physical mechanisms self-consistently. The software combines two-dimensional carrier transport, heat flux, strained quantum well gain computation, and optical wave guiding with a longitudinal mode solver. Careful adjustment of material parameters leads to an excellent agreement between simulation and measurements at all temperatures. At lower temperatures, Auger recombination controls the threshold current. At high temperatures, vertical electron leakage from the separate confinement layer is the main cause of performance degradation. The increase of internal absorption is less important. However, all these carrier and photon loss enhancements with higher temperature are mainly triggered by the reduction of the optical gain due to Fermi spreading of carriers.

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“…The role of nonradiative recombination and gain in this context has been discussed in the literature [39,40,45]. In particular, the influence of the reduction of differential gain with increasing temperature has been discussed in experimental investigations of the temperature sensitivity [40,45].…”

Section: Light-current Characteristics and Model Calibrationmentioning

confidence: 98%

“…Different physical processes have been discussed with respect to their role in determining the temperature sensitivity of these lasers: Auger recombination [39,40], intervalence band absorption [41], carrier leakage out of the active region [42], lateral current spreading [43], barrier absorption and spontaneous recombination [44], as well as gain reduction [45]. The self-consistent modeling of all of these mechanisms is required for a theoretical investigation of the temperature sensitivity.…”

Section: Temperature Sensitivity Of Ingaasp Semiconductor Multi-quantmentioning

confidence: 99%

“…Waveguide and background absorptive losses, intervalence band absorption, and lateral leakage are other processes affecting the device behavior. The Auger recombination, in particular, has been pointed out as one of the dominating processes [32,39]. Within the nonradiative recombination mechanisms, it has the strongest density dependence, being cubic, whereas other recombination mechanisms such as spontaneous recombination and Shockley-Read-Hall processes have a weaker, quadratic and linear density dependence, respectively [see (2.9), (2.14), (2.10)].…”

Section: Light-current Characteristics and Model Calibrationmentioning

confidence: 99%

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Fabry-Perot Lasers: Temperature and Many-Body Effects

Grote¹,

Heller²,

Scarmozzino³

et al.

Optoelectronic Devices

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In this chapter, we demonstrate the integration of microscopic gain modeling into the laser design tool LaserMOD, which is derived from the Minilase II simulator developed at the University of Illinois [1]. Multidimensional carrier transport, interaction with the optical field via stimulated and spontaneous emission, as well as the optical field are computed self-consistently in our fullscale laser simulations. Giving additional details with respect to our previous work [2], we demonstrate the effectiveness of this approach by investigating the temperature sensitivity of a broad-ridge Fabry-Perot laser structure with InGaAsP multi-quantum wells for 1.55 µm emission wavelength.Monochromatic light sources are key components in optical telecommunication systems. Predominantly, this need has been filled by semiconductor lasers due to their narrow linewidth. However, increasingly stringent requirements for bandwidth, tunability, power dissipation, temperature stability, and noise are being placed on these devices to meet network demands for higher capacity and lower bit error rates. As in the semiconductor industry, where electronic design automation assists in designing multimillion-gate integrated circuits, it is becoming common practice to employ simulation tools for designing and optimizing telecommunication networks and components. As a consequence of predictive modeling, the time to market as well as development cost of telecommunication infrastructure can be reduced, as fewer cycles between design and experimental verification are necessary. Different levels of model abstraction are used to describe the behavior of devices, depending on whether they are being simulated alone or with other components in an optical system. At the lowest level, simulations treat the fundamental device physics rigorously, whereas behavioral modeling, which allows for an increased number of elements to be treated, is applied at the system or network level. This chapter will focus on the former approach.To predict the performance of a new design, a successful commercial laser simulator must account for the many complex physical processes that con-

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Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers

Abstract: Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers

Cited by 33 publications

References 10 publications

Integration of microscopic gain modeling into a commercial laser simulation environment

Integration of microscopic gain modeling into a commercial laser simulation environment

Advanced analysis of high-temperature failure mechanisms in telecom lasers

Fabry-Perot Lasers: Temperature and Many-Body Effects

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