Chiral
surfaces are of growing interest for enantioselective adsorption
and reactions. While metal surfaces can be prepared with a wide range
of chiral surface orientations, chiral oxide surface preparation is
more challenging. We demonstrate the chirality of a metal surface
can be used to direct the homochiral growth of a thin film chiral
oxide. Specifically, we study the chiral “29” copper
oxide, formed by oxidizing a Cu(111) single crystal at 650 K. Surface
structure spread single crystals, which expose a continuous distribution
of surface orientations as a function of position on the crystal,
enable us to systematically investigate the mechanism of chirality
transfer between the metal and the surface oxide with high-resolution
scanning tunneling microscopy. We discover that the local underlying
metal facet directs the orientation and chirality of the oxide overlayer.
Importantly, single homochiral domains of the “29” oxide
were found in areas where the Cu step edges that templated growth
were ≤20 nm apart. We use this information to select a Cu(239
241 246) oriented single crystal and demonstrate that a “29”
oxide surface can be grown in homochiral domains by templating from
the subtle chirality of the underlying metal crystal. This work demonstrates
how a small degree of chirality induced by slight misorientation of
a metal surface (∼1 sites/20 nm2) can be amplified
by oxidation to yield a homochiral oxide with a regular array of chiral
oxide pores (∼75 sites/20 nm2). This offers a general
approach for making chiral oxide surfaces via oxidation of an appropriately
“miscut” metal surface.