Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires

Abstract

We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 µm. We also observe a decreasing length growth rate with increasing wire diameter.

InAs nanowire metal-oxide-semiconductor capacitors

“…NW formation is guided by gold nanoparticles that are deposited on a doped InAs ͑111͒B substrate. 7 A number of arrays were defined in parallel with various nanoparticle sizes to study radius dependence. The NW capacitance was measured at room temperature in a Cascade probe station system equipped with an Agilent 4294A impedance analyzer.…”

Tunable effectivegfactor in InAs nanowire quantum dots

“…We show that varying the size of our nanowire dots allows us to tune g * from a value close to the InAs bulk value down to |g * | = 2.3±0.3. The possibility to have multiple dots along a nanowire, each with a different g-factor, makes such systems interesting candidates for realizations of individually addressable spin qubits.Using chemical beam epitaxy InAs nanowires containing QDs were grown catalytically from Au nanoparticles deposited on a <111>B InAs substrate [11,12]. The * Electronic address: andreas.fuhrer@ftf.lth.se nanowires typically grow perpendicular to the substrate and high resolution scanning transmission electron microscope (STEM) images indicate that most of them…”

“…In the lateral direction the side facets of the wire form a hexagonal cross section with presumably hard wall conditions [see Fig . A small variation in D within the same growth (given by the size distribution of the gold catalyst particles) leads to slightly different growth rates [11]. The STEM images therefore allow us to establish a relation between D and L,w 1 ,w 2 for each growth.…”

Direct realizing the growth direction of epitaxial nanowires by electron microscopy

“…To solve this issue, the epitaxial nanowire growth provides the uniqueness that well aligned nanowires can be grown on the chosen substrates, and by selecting substrates with particular orientations, specifically orientated nanowires can be grown. The epitaxial III -V semiconductor nanowires are generally grown in metal-organic chemical vapor deposition [8][9][10], molecular beam epitaxy [11][12][13], chemical vapor deposition [14,15], through the vapor-liquid-solid [16][17][18][19] or the vapor-solid-solid mechanisms [20][21][22].…”